典型文献
Si-substrate vertical-structure InGaN/GaN micro-LED-based photodetector for beyond 10 Gbps visible light communication
文献摘要：
Visible light communication(VLC)has emerged as a promising communication method in 6G.However,the development of receiving devices is much slower than that of transmitting devices,limited by materials,structures,and fabrication.In this paper,we propose and fabricate an InGaN/GaN multiple-quantum-well-based vertical-structure micro-LED-based photodetector(μPD)on a Si substrate.A comprehensive comparison of the photo-electrical performance and communication performance of three sizes of μPDs,10,50,and 100 μm,is presented.The peak responsivity of all three μPDs is achieved at 400 nm,while the passband full-widths at half maxima are 87,72,and 78 nm for 10,50,and 100 μm μPDs,respectively.The-20 dB cutoff bandwidth is up to 822 MHz for 50 μm μPD.A data rate of 10.14 Gbps is experimentally demonstrated by bit and power loading discrete multi-tone modulation and the proposed digital pre-equalizer algorithm over 1 m free space utilizing the self-designed 4×4 50 μm μPD array as a receiver and a 450 nm laser diode as a transmitter.This is the first time a more than 10 Gbps VLC system has been achieved utilizing a GaN-based micro-PD,to the best of our knowledge.The investigation fully demonstrates the superiority of Si substrates and vertical structures in InGaN/GaN μPDs and shows its great potential for high-speed VLC links beyond 10 Gbps.
文献关键词：
中图分类号：
作者姓名：
JIANYANG SHI;ZENGYI XU;WENQING NIU;DONG LI;XIAOMING WU;ZIWEI LI;JUNWEN ZHANG;CHAO SHEN;GUANGXU WANG;XIAOLAN WANG;JIANLI ZHANG;FENGYI JIANG;SHAOHUA YU;NAN CHI
作者机构：
Key Laboratory for Information Science of Electromagnetic Waves(MoE),Fudan University,Shanghai 200433,China;Shanghai Engineering Research Center of Low-Earth-Orbit Satellite Communication and Applications,Shanghai 200433,China;Shanghai Collaborative Innovation Center of Low-Earth-Orbit Satellite Communication Technology,Shanghai 200433,China;National Institute of LED on Silicon Substrate,Nanchang University,Nanchang 330096,China;Peng Cheng Laboratory,Shenzhen 518055,China
文献出处：
引用格式：
[1]JIANYANG SHI;ZENGYI XU;WENQING NIU;DONG LI;XIAOMING WU;ZIWEI LI;JUNWEN ZHANG;CHAO SHEN;GUANGXU WANG;XIAOLAN WANG;JIANLI ZHANG;FENGYI JIANG;SHAOHUA YU;NAN CHI-.Si-substrate vertical-structure InGaN/GaN micro-LED-based photodetector for beyond 10 Gbps visible light communication)[J].光子学研究（英文）,2022(10):2394-2404
A类：
B类：
Si,vertical,InGaN,micro,LED,photodetector,beyond,Gbps,visible,light,communication,Visible,VLC,has,emerged,promising,method,6G,However,development,receiving,devices,much,slower,than,that,transmitting,limited,by,materials,structures,fabrication,this,paper,fabricate,multiple,quantum,well,comprehensive,comparison,electrical,performance,three,sizes,PDs,presented,peak,responsivity,achieved,while,passband,widths,half,maxima,are,respectively,dB,cutoff,bandwidth,MHz,data,experimentally,demonstrated,bit,power,loading,discrete,tone,modulation,proposed,digital,equalizer,algorithm,over,free,space,utilizing,self,designed,array,receiver,laser,diode,transmitter,This,first,more,system,been,best,our,knowledge,investigation,fully,demonstrates,superiority,substrates,shows,its,great,potential,high,speed,links
AB值：
0.552964
相似文献
机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
