典型文献
Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p-n junction
文献摘要：
Two-dimensional(2D)transition metal dichalcogenides(TMDs)have attracted extensive attention due to their unique elec-tronic and optical properties.In particular,TMDs can be flexibly combined to form diverse vertical van der Waals(vdWs)heterostructures without the limitation of lattice matching,which creates vast opportunities for fundamental investigation of novel optoelectronic applications.Here,we report an atomically thin vertical p-n junction WSe2/MoS2 produced by a chemical vapor deposition method.Transmission electron microscopy and steady-state photoluminescence experiments reveal its high quality and excellent optical properties.Back gate field effect transistor(FET)constructed using this p-n junction exhibits bipolar behaviors and a mobility of 9 cm2/(V·s).In addition,the photodetector based on MoS2/WSe2 het-erostructures displays outstanding optoelectronic properties(R=8 A/W,D*=2.93×1011 Jones,on/off ratio of 104),which benefited from the built-in electric field across the interface.The direct growth of TMDs p-n vertical heterostructures may offer a novel platform for future optoelectronic applications.
文献关键词：
中图分类号：
作者姓名：
Yu Xiao;Junyu Qu;Ziyu Luo;Ying Chen;Xin Yang;Danliang Zhang;Honglai Li;Biyuan Zheng;Jiali Yi;Rong Wu;Wenxia You;Bo Liu;Shula Chen;Anlian Pan
作者机构：
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province,College of Materials Science and Engineering,Hunan University,Changsha 410082,China;School of Materials Science and Engineering,Key Laboratory for Micro-Nano Physics and Technology of Hunan Province,Hunan University,Changsha 410082,China
文献出处：
引用格式：
[1]Yu Xiao;Junyu Qu;Ziyu Luo;Ying Chen;Xin Yang;Danliang Zhang;Honglai Li;Biyuan Zheng;Jiali Yi;Rong Wu;Wenxia You;Bo Liu;Shula Chen;Anlian Pan-.Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p-n junction)[J].光电子前沿（英文版）,2022(04):1-8
A类：
vdWs
B类：
Van,der,Waals,epitaxial,growth,optoelectronics,vertical,MoS2,WSe2,junction,Two,dimensional,2D,transition,metal,dichalcogenides,TMDs,have,attracted,extensive,attention,due,their,unique,optical,properties,In,particular,can,flexibly,combined,diverse,van,heterostructures,without,limitation,lattice,matching,which,creates,vast,opportunities,fundamental,investigation,novel,applications,Here,we,report,atomically,thin,produced,by,chemical,vapor,deposition,method,Transmission,microscopy,steady,state,photoluminescence,experiments,reveal,high,quality,excellent,Back,gate,field,effect,transistor,FET,constructed,using,this,exhibits,bipolar,behaviors,mobility,addition,photodetector,displays,outstanding,Jones,ratio,benefited,from,built,electric,across,interface,direct,may,offer,platform,future
AB值：
0.649844
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