典型文献
Halide perovskite single crystals for resistive switching
文献摘要：
As one of the most promising nonvolatile memory,resistive switching random-access memory(ReRAM)has exhibited great application potential for information storage and artificial synapses in computing and neuromorphic systems,and has shown great advantages including low power consumption,high integra-tion density,simple device structure,and fast switching speed.
文献关键词：
中图分类号：
作者姓名：
Shuaipeng Ge;Long-Biao Huang;Caofeng Pan
作者机构：
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China;CAS Center for Excellence in Nanoscience,Beijing Key Laboratory of Micro-nano Energy and Sensor,Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences,Beijing 101400,China;School of Nanoscience and Technology,University of Chinese Academy of Sciences,Beijing 100049,China
文献出处：
引用格式：
[1]Shuaipeng Ge;Long-Biao Huang;Caofeng Pan-.Halide perovskite single crystals for resistive switching)[J].科学通报（英文版）,2022(10):1018-1021
A类：
B类：
Halide,perovskite,single,crystals,resistive,switching,one,most,promising,nonvolatile,memory,random,access,ReRAM,has,exhibited,great,application,potential,information,storage,artificial,synapses,computing,neuromorphic,systems,shown,advantages,including,low,power,consumption,high,integra,density,simple,device,structure,fast,speed
AB值：
0.779622
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