首站-论文投稿智能助手
典型文献
Atomic scale memristive photon source
文献摘要:
Memristive devices are an emerging new type of devices operating at the scale of a few or even single atoms.They are currently used as storage elements and are investigated for performing in-memory and neuromorphic computing.Amongst these devices,Ag/amorphous-SiOx/Pt memristors are among the most studied systems,with the electrically induced filament growth and dynamics being thoroughly investigated both theoretically and experimentally.In this paper,we report the observation of a novel feature in these devices:The appearance of new photoluminescent centers in SiOx upon memristive switching,and photon emission correlated with the conductance changes.This observation might pave the way towards an intrinsically memristive atomic scale light source with applications in neural networks,optical interconnects,and quantum communication.
文献关键词:
作者姓名:
Bojun Cheng;Till Zellweger;Konstantin Malchow;Xinzhi Zhang;Mila Lewerenz;Elias Passerini;Jan Aeschlimann;Ueli Koch;Mathieu Luisier;Alexandros Emboras;Alexandre Bouhelier;Juerg Leuthold
作者机构:
ETH Zurich,Institute of Electromagnetic Fields,Zurich 8092,Switzerland;Laboratoire Interdisciplinaire Carnot de Bourgogne,UMR 6303 CNRS,Université de Bourgogne Franche-Comté,Dijon 21078,France;ETH Zurich,Integrated Systems Laboratory,Zurich 8092,Switzerland
引用格式:
[1]Bojun Cheng;Till Zellweger;Konstantin Malchow;Xinzhi Zhang;Mila Lewerenz;Elias Passerini;Jan Aeschlimann;Ueli Koch;Mathieu Luisier;Alexandros Emboras;Alexandre Bouhelier;Juerg Leuthold-.Atomic scale memristive photon source)[J].光:科学与应用(英文版),2022(07):1414-1422
A类:
B类:
Atomic,scale,memristive,photon,source,Memristive,devices,are,emerging,new,type,operating,few,even,single,atoms,They,currently,used,as,storage,elements,investigated,performing,memory,neuromorphic,computing,Amongst,these,Ag,amorphous,SiOx,Pt,memristors,among,most,studied,systems,electrically,induced,filament,growth,dynamics,being,thoroughly,both,theoretically,experimentally,In,this,paper,we,report,observation,novel,feature,appearance,photoluminescent,centers,upon,switching,emission,correlated,conductance,changes,This,might,pave,way,towards,intrinsically,atomic,light,applications,neural,networks,optical,interconnects,quantum,communication
AB值:
0.724201
相似文献
Broadband 1T-polytype tantalum disulfide saturable absorber for solid-state bulk lasers
Mengxia Wang;Hailong Qiu;Tianwen Yang;Zhengping Wang;Chuanrui Zhao;Yuanan Zhao;Ting Yu;Yuyao Jiang;Meiling Chen;Yafei Lian;Ge Zhang;Hongjun Liu;Zhanggui Hu;Jianda Shao-Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystal, Tianjin University of Technology, Tianjin 300384, China;State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;Laboratory of High Power Fiber Laser Technology, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;College of Science, Shanghai University, Shanghai 200444, China;Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China;e-mail: qiu@tjut.edu.cn;e-mail: yazhao@siom.ac.cn;e-mail: jdshao@siom.ac.cn
Broadband 1T-polytype tantalum disulfide saturable absorber for solid-state bulk lasers
MENGXIA WANG;HAILONG QIU;TIANWEN YANG;ZHENGPING WANG;CHUANRUI ZHAO;YUANAN ZHAO;TING YU;YUYAO JIANG;MEILING CHEN;YAFEI LIAN;GE ZHANG;HONGJUN LIU;ZHANGGUI HU;JIANDA SHAO-Laboratory of Thin Film Optics,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Tianjin Key Laboratory of Functional Crystal Materials,Institute of Functional Crystal,Tianjin University of Technology,Tianjin 300384,China;State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China;Laboratory of High Power Fiber Laser Technology,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;College of Science,Shanghai University,Shanghai 200444,China;Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China
Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature
Sai Li;Ao Du;Yadong Wang;Xinran Wang;Xueying Zhang;Houyi Cheng;Wenlong Cai;Shiyang Lu;Kaihua Cao;Biao Pan;Na Lei;Wang Kang;Junming Liu;Albert Fert;Zhipeng Hou;Weisheng Zhao-Fert Beijing Institute,MIIT Key Laboratory of Spintronics,School of Integrated Circuit Science and Engineering,Beihang University,Beijing 100191,China;Shenyuan Honors College,Beihang University,Beijing 100191,China;Beihang-Geortek Joint Microelectronics Institute,Qingdao Research Institute,Beihang University,Qingdao 266104,China;Guangdong Provincial Key Laboratory of Optical Information Materials and Technology&Institute for Advanced Materials,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou 510006,China;Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 211102,China
机标中图分类号,由域田数据科技根据网络公开资料自动分析生成,仅供学习研究参考。