典型文献
Multiple modes of perpendicular magnetization switching scheme in single spin-orbit torque device
文献摘要：
Spin-orbit torque(SOT)has been considered as one of the promising technologies for the next-generation magnetic random access memory(MRAM).So far,SOT has been widely utilized for inducing various modes of magnetization switching.However,it is a challenge that so many multiple modes of magnetization switching are integrated together.Here we propose a method of implementing both unipolar switching and bipolar switching of the perpendicular magnetization within a single SOT device.The mode of switching can be easily changed by tuning the amplitude of the applied current.We show that the field-like torque plays an important role in switching process.The field-like torque induces the precession of the magnetization in the case of unipolar switching,however,the field-like torque helps to generate an effective z-component torque in the case of bipolar switching.In addition,the influence of key parameters on the mode of switching is discussed,including the field-like torque strength,the bias field,and the current density.Our proposal can be used to design novel reconfigurable logic circuits in the near future.
文献关键词：
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作者姓名：
Tong-Xi Liu;Zhao-Hao Wang;Min Wang;Chao Wang;Bi Wu;Wei-Qiang Liu;Wei-Sheng Zhao
作者机构：
Fert Beijing Institute,MIIT Key Laboratory of Spintronics,School of Integrated Circuit Science and Engineering,Beihang University,Beijing 100191,China;College of Integrated Circuits,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China
文献出处：
引用格式：
[1]Tong-Xi Liu;Zhao-Hao Wang;Min Wang;Chao Wang;Bi Wu;Wei-Qiang Liu;Wei-Sheng Zhao-.Multiple modes of perpendicular magnetization switching scheme in single spin-orbit torque device)[J].中国物理B（英文版）,2022(10):318-322
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0.544692
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