典型文献
High uniformity and stability of 1S1R directly stacked for high-density cross-point memory applications
文献摘要：
In this letter,the Ti-doped NbOx-based selector is applied to SiNOx-based resistive random-access memory(RRAM),forming Pt/NbOx(Ti-doped)/SiNOx/Ti one selector-one RRAM device(1S1R),to suppress the sneak path current.The fabricated 1S1R exhibits stable direct current(DC)endurance(＞200 cycles),suitable memory window(＞40),matched selectivity(＞40)and high uniformity of switching parameters.The capacity of the 1S1R array is about 1000 times larger than that of RRAM.More importantly,there is no intermediate metal in the 1S1R,which makes it be used in three-dimensional(3D)vertical RRAM crossbar array.This work contributes to realize high-density cross-point 1S1R memory applications.
文献关键词：
中图分类号：
作者姓名：
Zhi-Ying Yu;Jia-Yi Zhao;Guo-Kun Ma;Ao Chen;Da-Lei Chen;Yi-Heng Rao;Hao Wang
作者机构：
Hubei Yangtze Memory Laboratories,Wuhan 430205,China;School of Microelectronic,Hubei University,Wuhan 430062,China;School of Physics and Technology,Wuhan University,Wuhan 430072,China
文献出处：
引用格式：
[1]Zhi-Ying Yu;Jia-Yi Zhao;Guo-Kun Ma;Ao Chen;Da-Lei Chen;Yi-Heng Rao;Hao Wang-.High uniformity and stability of 1S1R directly stacked for high-density cross-point memory applications)[J].稀有金属（英文版）,2022(11):3671-3676
A类：
SiNOx,sneak
B类：
High,uniformity,stability,1S1R,directly,stacked,high,density,point,memory,applications,In,this,letter,Ti,doped,NbOx,selector,applied,resistive,random,access,RRAM,forming,Pt,one,device,suppress,path,current,fabricated,exhibits,stable,DC,endurance,cycles,suitable,window,matched,selectivity,switching,parameters,capacity,array,about,times,larger,than,that,More,importantly,there,no,intermediate,metal,which,makes,be,used,three,dimensional,vertical,crossbar,This,work,contributes,realize
AB值：
0.566185
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