典型文献
Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes
文献摘要：
The hole injection capability is essentially important for GaN-based vertical cavity surface emitting lasers (VCSELs) to enhance the laser power. In this work, we propose GaN-based VCSELs with the p-AlGaN/p-GaN structure as the p-type hole supplier to facilitate the hole injection. The p-AlGaN/p-GaN heterojunction is able to store the electric field and thus can moderately adjust the drift velocity and the kinetic energy for holes, which can improve the thermionic emission process for holes to travel across the p-type electron blocking layer (p-EBL). Besides, the valence band barrier height in the p-EBL can be reduced as a result of usage of the p-AlGaN layer. Therefore, the better stimulated radiative recombination rate and the increased laser power are obtained, thus enhancing the 3 dB frequency bandwidth. Moreover, we also investigate the impact of the p-AlGaN/p-GaN structure with various AlN compositions in the p-AlGaN layer on the hole injection capability, the laser power, and the 3 dB frequency bandwidth.
文献关键词：
中图分类号：
作者姓名：
Lei Han;Yuanbin Gao;Sheng Hang;Chunshuang Chu;Yonghui Zhang;Quan Zheng;Qing Li;Zi-Hui Zhang
作者机构：
State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China;Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China;Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin 300401, China;Key Engineering Center of Flat-Panel-Display Glass and Equipment, Shijiazhuang 050035, China
文献出处：
引用格式：
[1]Lei Han;Yuanbin Gao;Sheng Hang;Chunshuang Chu;Yonghui Zhang;Quan Zheng;Qing Li;Zi-Hui Zhang-.Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes)[J].中国光学快报（英文版）,2022(03):031402
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AB值：
0.496957
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