典型文献
Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection
文献摘要：
Solar-blind ultraviolet photodetectors[SBPDs]have attracted tremendous attention in the environmental,industrial,mili-tary,and biological fields.Aluminum gallium nitride[AlGaN],a kind of representative Ⅲ-nitride semiconductor,has prom-ising prospects in solar-blind photodetection owing to its tunable wide bandgap and industrial feasibility.Considering the high defect density in the AlGaN epilayer directly grown on a sapphire substrate,employing an AlN/sapphire template turns out to be an effective method to achieve a high-quality AlGaN epilayer,thereby enhancing the SBPD performances.In recent years,a variety of remarkable breakthroughs have been achieved in the SBPDs.In this paper,the progress on photovoltaic AlGaN-based SBPDs is reviewed.First,the basic physical properties of AlGaN are introduced.Then,fabrication methods and defect annihilation of the AlN/sapphire template are discussed.Various photovoltaic SBPDs are further summarized,includ-ing Schottky barrier,metal-semiconductor-metal,p-n/p-i-n and avalanche photodiodes.Furthermore,surface modification and photoelectrochemical cell techniques are introduced.Benefitting from the development of fabrication techniques and optoelectronic devices,photovoltaic AlGaN photodiodes exhibit a promising prospect in solar-blind ultraviolet photodetection.
文献关键词：
中图分类号：
作者姓名：
Xu Liu;Shengjun Zhou
作者机构：
Center for Photonics and Semiconductors,School of Power and Mechanical Engineering,Wuhan University,Wuhan 430072,China
文献出处：
引用格式：
[1]Xu Liu;Shengjun Zhou-.Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection)[J].中国光学快报（英文版）,2022(11):53-77
A类：
SBPDs,mili,SBPD
B类：
Progress,photovoltaic,AlGaN,photodiodes,solar,blind,ultraviolet,photodetection,Solar,photodetectors,have,attracted,tremendous,attention,environmental,industrial,tary,biological,fields,Aluminum,gallium,nitride,kind,representative,semiconductor,has,prospects,owing,its,tunable,wide,bandgap,feasibility,Considering,high,defect,density,epilayer,directly,grown,sapphire,substrate,employing,AlN,template,turns,out,effective,quality,thereby,enhancing,performances,In,recent,years,variety,remarkable,breakthroughs,been,achieved,this,paper,progress,reviewed,First,basic,physical,properties,are,introduced,Then,fabrication,methods,annihilation,discussed,Various,further,summarized,includ,Schottky,barrier,metal,avalanche,Furthermore,surface,modification,photoelectrochemical,cell,techniques,Benefitting,from,development,optoelectronic,devices,exhibit,promising
AB值：
0.545497
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