典型文献
Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection
文献摘要：
Solar-blind ultraviolet photodetectors (SBPDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. Aluminum gallium nitride (AlGaN), a kind of representative III-nitride semiconductor, has promising prospects in solar-blind photodetection owing to its tunable wide bandgap and industrial feasibility. Considering the high defect density in the AlGaN epilayer directly grown on a sapphire substrate, employing an AlN/sapphire template turns out to be an effective method to achieve a high-quality AlGaN epilayer, thereby enhancing the SBPD performances. In recent years, a variety of remarkable breakthroughs have been achieved in the SBPDs. In this paper, the progress on photovoltaic AlGaN-based SBPDs is reviewed. First, the basic physical properties of AlGaN are introduced. Then, fabrication methods and defect annihilation of the AlN/sapphire template are discussed. Various photovoltaic SBPDs are further summarized, including Schottky barrier, metal-semiconductor-metal, p-n/p-i-n and avalanche photodiodes. Furthermore, surface modification and photoelectrochemical cell techniques are introduced. Benefitting from the development of fabrication techniques and optoelectronic devices, photovoltaic AlGaN photodiodes exhibit a promising prospect in solar-blind ultraviolet photodetection.
文献关键词：
中图分类号：
作者姓名：
Xu Liu;Shengjun Zhou
作者机构：
Center for Photonics and Semiconductors, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
文献出处：
引用格式：
[1]Xu Liu;Shengjun Zhou-.Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection)[J].中国光学快报（英文版）,2022(11):112501
A类：
SBPDs,SBPD
B类：
Progress,photovoltaic,AlGaN,photodiodes,solar,blind,ultraviolet,photodetection,Solar,photodetectors,have,attracted,tremendous,attention,environmental,industrial,military,biological,fields,Aluminum,gallium,nitride,kind,representative,III,semiconductor,has,promising,prospects,owing,its,tunable,wide,bandgap,feasibility,Considering,high,defect,density,epilayer,directly,grown,sapphire,substrate,employing,AlN,template,turns,out,effective,quality,thereby,enhancing,performances,In,recent,years,variety,remarkable,breakthroughs,been,achieved,this,paper,progress,reviewed,First,basic,physical,properties,are,introduced,Then,fabrication,methods,annihilation,discussed,Various,further,summarized,including,Schottky,barrier,metal,avalanche,Furthermore,surface,modification,photoelectrochemical,cell,techniques,Benefitting,from,development,optoelectronic,devices,exhibit
AB值：
0.561851
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