典型文献
Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes[Invited]
文献摘要：
The hole injection capability is essentially important for GaN-based vertical cavity surface emitting lasers(VCSELs]to enhance the laser power.In this work,we propose GaN-based VCSELs with the p-AlGaN/p-GaN structure as the p-type hole supplier to facilitate the hole injection.The p-AlGaN/p-GaN heterojunction is able to store the electric field and thus can moderately adjust the drift velocity and the kinetic energy for holes,which can improve the thermionic emission proc-ess for holes to travel across the p-type electron blocking layer[p-EBL].Besides,the valence band barrier height in the p-EBL can be reduced as a result of usage of the p-AlGaN layer.Therefore,the better stimulated radiative recombination rate and the increased laser power are obtained,thus enhancing the 3 dB frequency bandwidth.Moreover,we also inves-tigate the impact of the p-AlGaN/p-GaN structure with various AlN compositions in the p-AlGaN layer on the hole injection capability,the laser Dower,and the 3 dB freauency bandwidth.
文献关键词：
中图分类号：
作者姓名：
Lei Han;Yuanbin Gao;Sheng Hang;Chunshuang Chu;Yonghui Zhang;Quan Zheng;Qing Li;Zi-Hui Zhang
作者机构：
State Key Laboratory of Reliability and Intelligence of Electrical Equipment,Hebei University of Technology,Tianjin 300401,China;Key Laboratory of Electronic Materials and Devices of Tianjin,School of Electronics and Information Engineering,Hebei University of Technology,Tianjin 300401,China;Hebei Key Laboratory of Advanced Laser Technology and Equipment,Tianjin 300401,China;Key Engineering Center of Flat-Panel-Display Glass and Equipment,Shijiazhuang 050035,China
文献出处：
引用格式：
[1]Lei Han;Yuanbin Gao;Sheng Hang;Chunshuang Chu;Yonghui Zhang;Quan Zheng;Qing Li;Zi-Hui Zhang-.Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes[Invited])[J].中国光学快报（英文版）,2022(03):35-40
A类：
ess,Dower,freauency
B类：
Impact,AlGaN,injection,layer,vertical,cavity,surface,emitting,diodes,Invited,capability,essentially,important,lasers,VCSELs,enhance,power,this,work,propose,structure,type,supplier,facilitate,heterojunction,able,store,electric,field,thus,can,moderately,adjust,drift,velocity,kinetic,energy,holes,which,improve,thermionic,emission,proc,travel,across,electron,blocking,EBL,Besides,valence,barrier,height,reduced,result,usage,Therefore,better,stimulated,radiative,recombination,increased,are,obtained,enhancing,dB,frequency,bandwidth,Moreover,also,inves,tigate,impact,various,AlN,compositions
AB值：
0.493967
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