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Layer-by-layer epitaxy of multi-layer MoS2 wafers
文献摘要：
The 2D semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon.So far,high-quality monolayer MoS2 wafers have been available and various demonstrations from individual transistors to integrated circuits have also been shown.In addition to the monolayer,multilayers have narrower band gaps but improved carrier mobilities and current capacities over the monolayer.However,achieving high-quality multi-layer MoS2 wafers remains a challenge.Here we report the growth of high-quality multi-layer MoS2 4-inch wafers via the layer-by-layer epitaxy process.The epitaxy leads to well-defined stacking orders between adjacent epitaxial layers and offers a delicate control of layer numbers up to six.Systematic evaluations on the atomic structures and electronic properties were carried out for achieved wafers with different layer numbers.Significant improvements in device performances were found in thicker-layer field-effect transistors(FETs),as expected.For example,the average field-effect mobility(μFE)at room temperature(RT)can increase from～80 cm2·V-1·s-1 for monolayers to～1 10/145 cm2·V-1·s-11 for bilayer/trilayer devices.The highest RT μFE of234.7 cm2·V-11s-1 and record-high on-current densities of 1.70 mA·μm-1 at Vds=2 V were also achieved in trilayer MoS2 FETs with a high on/off ratio of＞107.Our work hence moves a step closer to practical applications of 2D MoS2 in electronics.
文献关键词：
中图分类号：
[1] 医药、卫生（R） / 药学（R9） / 药理学（R96） / 实验药理学（R965）
[2] 医药、卫生（R） / 基础医学（R3） / 病理学（R36） / 病理过程（R364）
[3] 数理科学和化学（O） / 力学（O3） / 振动理论（O32） / 非线性振动（O322）
作者姓名：
Qinqin Wang;Jian Tang;Xiaomei Li;Jinpeng Tian;Jing Liang;Na Li;Depeng Ji;Lede Xian;Yutuo Guo;Lu Li;Qinghua Zhang;Yanbang Chu;Zheng Wei;Yanchong Zhao;Luojun Du;Hua Yu;Xuedong Bai;Lin Gu;Kaihui Liu;Wei Yang;Rong Yang;Dongxia Shi;Guangyu Zhang
作者机构：
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100190,China;Collaborative Innovation Center of Quantum Matter and School of Physics,Peking University,Beijing 100871,China;Songshan Lake Materials Laboratory,Dongguan 523808,China
文献出处：
国家科学评论（英文版）
引用格式：
[1]Qinqin Wang;Jian Tang;Xiaomei Li;Jinpeng Tian;Jing Liang;Na Li;Depeng Ji;Lede Xian;Yutuo Guo;Lu Li;Qinghua Zhang;Yanbang Chu;Zheng Wei;Yanchong Zhao;Luojun Du;Hua Yu;Xuedong Bai;Lin Gu;Kaihui Liu;Wei Yang;Rong Yang;Dongxia Shi;Guangyu Zhang-.Layer-by-layer epitaxy of multi-layer MoS2 wafers)[J].国家科学评论（英文版）,2022(06):148-157
A类：
of234
B类：
Layer,by,epitaxy,MoS2,wafers,2D,semiconductor,has,great,potential,advanced,electronics,technologies,beyond,silicon,So,far,quality,have,been,available,various,demonstrations,from,individual,transistors,integrated,circuits,also,shown,In,addition,multilayers,narrower,band,gaps,but,improved,carrier,mobilities,current,capacities,over,However,achieving,remains,challenge,Here,report,growth,inch,via,process,leads,well,defined,stacking,orders,between,adjacent,epitaxial,offers,delicate,control,numbers,up,six,Systematic,evaluations,atomic,structures,properties,were,carried,out,achieved,different,Significant,improvements,performances,found,thicker,field,effect,FETs,expected,For,example,average,mobility,room,temperature,increase,monolayers,bilayer,trilayer,devices,highest,11s,record,densities,mA,Vds,Our,work,hence,moves,step,closer,practical,applications
AB值：
0.575592
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