典型文献
Epitaxial integration of a perpendicularly magnetized ferrimagnetic metal on a ferroelectric oxide for electric-field control
文献摘要：
Ferrimagnets,which contain the advantages of both ferromagnets(detectable moments)and antiferro-magnets(ultrafast spin dynamics),have recently attracted great attention.Here,we report the optimization of epi-taxial growth of a tetragonal perpendicularly magnetized ferrimagnet Mn2Ga on MgO.Electrical transport,magnetic properties and the anomalous Hall effect(AHE)were systematically studied.Furthermore,we successfully inte-grated high-quality epitaxial ferrimagnetic Mn2Ga thin films onto ferroelectric 0.7PbMg1/3Nb2/3O3-0.3PbTiO3 single crystals with a MgO buffer layer.It was found that the AHE of such a ferrimagnet can be effectively modu-lated by a small electric field over a large temperature range in a nonvolatile manner.This work thus demon-strates the great potential of ferrimagnets for developing high-density and low-power spintronic devices.
文献关键词：
中图分类号：
作者姓名：
Xin Zhang;Pei-Xin Qin;Ze-Xin Feng;Han Yan;Xiao-Ning Wang;Xiao-Rong Zhou;Hao-Jiang Wu;Hong-Yu Chen;Zi-Ang Meng;Zhi-Qi Liu
作者机构：
School of Materials Science and Engineering,Beihang University,Beijing 100191,China
文献出处：
引用格式：
[1]Xin Zhang;Pei-Xin Qin;Ze-Xin Feng;Han Yan;Xiao-Ning Wang;Xiao-Rong Zhou;Hao-Jiang Wu;Hong-Yu Chen;Zi-Ang Meng;Zhi-Qi Liu-.Epitaxial integration of a perpendicularly magnetized ferrimagnetic metal on a ferroelectric oxide for electric-field control)[J].稀有金属（英文版）,2022(05):1554-1562
A类：
Ferrimagnets,antiferro,taxial,ferrimagnet,Mn2Ga,7PbMg1,3O3,3PbTiO3,ferrimagnets
B类：
Epitaxial,integration,perpendicularly,magnetized,ferrimagnetic,metal,ferroelectric,oxide,field,control,which,contain,advantages,both,ferromagnets,detectable,moments,ultrafast,dynamics,have,recently,attracted,great,attention,Here,report,optimization,growth,tetragonal,MgO,Electrical,transport,properties,anomalous,Hall,AHE,were,systematically,studied,Furthermore,successfully,grated,high,quality,epitaxial,thin,films,onto,3Nb2,single,crystals,buffer,layer,It,was,found,that,such,can,be,effectively,modu,lated,by,small,over,large,temperature,range,nonvolatile,manner,This,work,thus,demon,strates,potential,developing,density,low,power,spintronic,devices
AB值：
0.617399
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