Memtransistor,a multi-terminal device that combines both the characteristics of a memristor and a tran-sistor,has been intensively studied in two-dimensional layered materials(2DLM),which show potential for applications in such as neuromorphic computation.However,while often based on the migration of ions or atomic defects in the conduction channels,performances of memtransistors suffer from the poor reliability and tunability.Furthermore,those known 2DLM-based memtransistors are mostly constructed in a lateral manner,which hinders the further increasing of the transistor densities per area.Until now,fabricating non-atomic-diffusion based memtransistors with vertical structure remains challenging.Here,we demonstrate a vertically-integrated ferroelectric memristor by hetero-integrating the 2D ferroelectric materials CuInP2S6(CIPS)into a graphite/CulnP2S6/MoS2 vertical heterostructure.Memristive behaviour and multi-level resistance states were realized.Essential synaptic behaviours including excitatory postsy-naptic current,paired-pulse-facilitation,and spike-amplitude-dependent plasticity are successfully mim-icked.Moreover,by applying a gate potential,the memristive behaviour and synaptic features can be effectively gate tuned.Our findings pave the way for the realization of novel gate-tunable ferroelectric synaptic devices with the capability to perform complex neural functions.

Yaning Wang;Wanying Li;Yimeng Guo;Xin Huang;Zhaoping Luo;Shuhao Wu;Hai Wang;Jiezhi Chen;Xiuyan Li;Xuepeng Zhan;Hanwen Wang

Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China;School of Material Science and Engineering,University of Science and Technology of China,Shenyang 110016,China;Department of Applied Physics,Aalto University,Aalto,Finland;School of Information Science and Engineering(ISE),Shandong University,Qingdao 266237,China

材料科学技术（英文版）

[1]Yaning Wang;Wanying Li;Yimeng Guo;Xin Huang;Zhaoping Luo;Shuhao Wu;Hai Wang;Jiezhi Chen;Xiuyan Li;Xuepeng Zhan;Hanwen Wang-.A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction)[J].材料科学技术（英文版）,2022(33):239-244

Memtransistor,sistor,2DLM,memtransistors,CuInP2S6,CulnP2S6,postsy,naptic,icked

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