典型文献
Encapsulation strategies on 2D materials for field effect transistors and photodetectors
文献摘要:
Two-dimensional(2D)layered materials provide a promising alternative solution for overcoming the scal-ing limits in conventional Si-based devices.However,practical applications of 2D materials are facing crucial bottlenecks,particularly that arising from the instability under ambient condition.The studies of degradation mechanisms and protecting strategies for overcoming the ambient instability of 2D materials have attracted extensive research attentions,both experimentally and theoretically.This review attempts to provide an overview on the recent progress of the encapsulation strategies for 2D materials.The en-capsulation strategies of mechanical transfer,polymer capping,atomic layer deposition,in-situ oxidation,and surface functionalization are systematically discussed for improving the ambient stability of 2D mate-rials.In addition,the current advances in air-stable and high-performance 2D materials-based field effect transistors(FETs)and photodetectors assisted by the encapsulation strategies are outlined.Furthermore,the future directions of encapsulation techniques of 2D materials for FETs and photodetectors applications are suggested.
文献关键词:
中图分类号:
作者姓名:
Wenjuan Huang;Yue Zhang;Mengting Song;Bugao Wang;Huayi Hou;Xiaozong Hu;Xiangbai Chen;Tianyou Zhai
作者机构:
Hubei Key Laboratory of Optical Information and Pattern Recognition,Wuhan Institute of Technology,Wuhan 430205,China;State Key Laboratory of Materials Processing and Die&Mould Technology,School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China;Green Catalysis Center,College of Chemistry,Zhengzhou University,Zhengzhou 450001,China
文献出处:
引用格式:
[1]Wenjuan Huang;Yue Zhang;Mengting Song;Bugao Wang;Huayi Hou;Xiaozong Hu;Xiangbai Chen;Tianyou Zhai-.Encapsulation strategies on 2D materials for field effect transistors and photodetectors)[J].中国化学快报(英文版),2022(05):2281-2290
A类:
capsulation
B类:
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AB值:
0.585591
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