典型文献
Design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor
文献摘要：
The input/output (I/O) pins of an industry-level fluorescent optical fiber temperature sensor readout circuit need on-chip integrated high-performance electro-static discharge (ESD) protection devices. It is difficult for the failure level of basic N-type buried layer gate-controlled silicon controlled rectifier (NBL-GCSCR) manufactured by the 0.18 μm standard bipolar- CMOS-DMOS (BCD) process to meet this need. Therefore, we propose an on-chip integrated novel deep N-well gate-controlled SCR (DNW-GCSCR) with a high failure level to effectively solve the problems based on the same semiconductor process. Technology computer-aided design (TCAD) simulation is used to analyze the device characteristics. SCRs are tested by trans-mission line pulses (TLP) to obtain accurate ESD parameters. The holding voltage (24.03 V) of NBL-GCSCR with the longitu-dinal bipolar junction transistor (BJT) path is significantly higher than the holding voltage (5.15 V) of DNW-GCSCR with the lateral SCR path of the same size. However, the failure current of the NBL-GCSCR device is 1.71 A, and the failure current of the DNW-GCSCR device is 20.99 A. When the gate size of DNW-GCSCR is increased from 2 μm to 6 μm, the holding voltage is increased from 3.50 V to 8.38 V. The optimized DNW-GCSCR (6 μm) can be stably applied on target readout circuits for on-chip electrostatic discharge protection.
文献关键词：
中图分类号：
作者姓名：
Yang WANG;Xiangliang JIN;Jian YANG;Feng YAN;Yujie LIU;Yan PENG;Jun LUO;Jun YANG
作者机构：
School of Physics and Electronics,Hunan Normal University,Changsha 410081,China;School of Mechatronic Engineering and Automation,Shanghai University,Shanghai 200444,China;Faculty of Engineering,Western University,London,ON N6A 3K7,Canada
文献出处：
引用格式：
[1]Yang WANG;Xiangliang JIN;Jian YANG;Feng YAN;Yujie LIU;Yan PENG;Jun LUO;Jun YANG-.Design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor)[J].信息与电子工程前沿（英文）,2022(01):158-170
A类：
GCSCR,SCRs
B类：
Design,optimization,gate,controlled,dual,direction,discharge,industry,level,fluorescent,optical,fiber,temperature,sensor,input,output,pins,readout,need,chip,integrated,performance,ESD,protection,devices,It,difficult,failure,basic,type,buried,layer,silicon,rectifier,NBL,manufactured,by,standard,bipolar,CMOS,DMOS,BCD,process,meet,this,Therefore,propose,novel,deep,well,DNW,effectively,solve,problems,same,semiconductor,Technology,computer,aided,design,TCAD,simulation,used,analyze,characteristics,are,tested,mission,line,pulses,TLP,obtain,accurate,parameters,holding,voltage,longitu,dinal,junction,transistor,BJT,path,significantly,higher,than,lateral,size,However,current,When,increased,from,optimized,stably,applied,target,circuits,electrostatic
AB值：
0.4721
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机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
