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典型文献
Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction
文献摘要：
A novel junction terminal extension structure is proposed for vertical diamond Schottky barrier diodes(SBDs)by using an n-Ga2O3/p-diamond heterojunction.The depletion region of the heterojunction suppresses part of the forward current conduction path,which slightly increases the on-resistance.On the other hand,the reverse breakdown voltage is enhanced obviously because of attenuated electric field crowding.By optimizing the doping concentration,length,and depth of n-Ga2O3,the trade-off between on-resistance and breakdown voltage with a high Baliga figure of merit(FOM)value is realized through Silvaco technology computer-aided design simulation.In addition,the effect of the work functions of the Schottky electrodes is evaluated.The results are beneficial to realizing a high-performance vertical diamond SBD.
文献关键词：
中图分类号：
[1] 数理科学和化学（O） / 力学（O3） / 振动理论（O32） / 非线性振动（O322）
[2] 医药、卫生（R） / 基础医学（R3） / 病理学（R36） / 病理过程（R364）
[3] 医药、卫生（R） / 药学（R9） / 药理学（R96） / 实验药理学（R965）
作者姓名：
Wang Lin;Ting-Ting Wang;Qi-Liang Wang;Xian-Yi Lv;Gen-Zhuang Li;Liu-An Li;Jin-Ping Ao;Guang-Tian Zou
作者机构：
State Key Laboratory of Superhard Material,College of Physics,Jilin University,Changchun 130012,China;Shenzhen Research Institute,Jilin University,Shenzhen 518057,China;National Key Discipline Laboratory of Wide Bandgap Semiconductor,Xidian University,Xi'an 710071,China
文献出处：
中国物理B（英文版）
引用格式：
[1]Wang Lin;Ting-Ting Wang;Qi-Liang Wang;Xian-Yi Lv;Gen-Zhuang Li;Liu-An Li;Jin-Ping Ao;Guang-Tian Zou-.Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction)[J].中国物理B（英文版）,2022(10):133-138
A类：
SBDs,Baliga
B类：
Design,vertical,diamond,Schottky,barrier,terminal,extension,structure,by,using,Ga2O3,heterojunction,novel,proposed,diodes,depletion,region,suppresses,part,forward,current,conduction,path,which,slightly,increases,resistance,On,other,hand,reverse,breakdown,voltage,enhanced,obviously,because,attenuated,electric,field,crowding,By,optimizing,doping,concentration,length,depth,trade,off,between,high,figure,merit,FOM,value,realized,through,Silvaco,technology,computer,aided,design,simulation,In,addition,effect,work,functions,electrodes,evaluated,results,are,beneficial,realizing,performance
AB值：
0.592212
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