典型文献
Photonic crystal nanobeam cavities based on 4H-silicon carbide on insulator
文献摘要：
The 4H-silicon carbide on insulator[4H-SiCOI]has recently emerged as an attractive material platform for integrated pho-tonics due to its excellent quantum and nonlinear optical properties.Here,we experimentally realize one-dimensional pho-tonic crystal nanobeam cavities on the ion-cutting 4H-SiCOI platform.The cavities exhibit quality factors up to 6.1×103 and mode volumes down to 0.63×[λ/n]3 in the visible and near-infrared wavelength range.Moreover,by changing the exci-tation laser power,the fundamental transverse-electric mode can be dynamically tuned by 0.6 nm with a tuning rate of 33.5 pm/mW.The demonstrated devices offer the promise of an appealing microcavity system for interfacing the optically addressable spin defects in 4H-SiC.
文献关键词：
中图分类号：
作者姓名：
Liping Zhou;Chengli Wang;Ailun Yi;Chen Shen;Yifan Zhu;Kai Huang;Min Zhou;Jiaxiang Zhang;Xin Ou
作者机构：
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;XOI Technology Co.,Ltd.,Shanghai 201899,China
文献出处：
引用格式：
[1]Liping Zhou;Chengli Wang;Ailun Yi;Chen Shen;Yifan Zhu;Kai Huang;Min Zhou;Jiaxiang Zhang;Xin Ou-.Photonic crystal nanobeam cavities based on 4H-silicon carbide on insulator)[J].中国光学快报（英文版）,2022(03):24-29
A类：
SiCOI,addressable
B类：
Photonic,crystal,nanobeam,cavities,4H,silicon,carbide,insulator,has,recently,emerged,attractive,material,platform,integrated,pho,tonics,due,its,excellent,quantum,nonlinear,properties,Here,experimentally,realize,one,dimensional,cutting,exhibit,quality,factors,up,mode,volumes,down,visible,infrared,wavelength,range,Moreover,by,changing,exci,tation,laser,power,fundamental,transverse,electric,can,dynamically,tuned,tuning,pm,mW,demonstrated,devices,offer,promise,appealing,microcavity,system,interfacing,optically,spin,defects
AB值：
0.602532
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机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
