典型文献
Silicon nitride passive and active photonic integrated circuits:trends and prospects
文献摘要：
The use of silicon nitride in integrated photonics has rapidly progressed in recent decades.Ultra-low-loss wave-guides based on silicon nitride are a favorable platform for the research of nonlinear and microwave photonics and their application to a wide variety of fields,including precision metrology,communications,sensing,imaging,navigation,computation,and quantum physics.In recent years,the integration of Si and Ⅲ-Ⅴ materials has enabled new large-scale,advanced silicon nitride-based photonic integrated circuits with versatile functionality.In this perspective article,we review current trends and the state-of-the-art in silicon nitride-based photonic devices and circuits.We highlight the hybrid and heterogeneous integration of Ⅲ-Ⅴ with silicon nitride for electrically pumped soliton microcomb generation and ultra-low-noise lasers with fundamental linewidths in the tens of mHz range.We also discuss several ultimate limits and challenges of silicon nitride-based photonic device performance and provide routes and prospects for future development.
文献关键词：
中图分类号：
作者姓名：
CHAO XIANG;WARREN JIN;JOHN E.BOWERS
作者机构：
Department of Electrical and Computer Engineering,University of California,Santa Barbara,Santa Barbara,California 93106,USA
文献出处：
引用格式：
[1]CHAO XIANG;WARREN JIN;JOHN E.BOWERS-.Silicon nitride passive and active photonic integrated circuits:trends and prospects)[J].光子学研究（英文）,2022(06):前插1-前插15
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0.619179
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