典型文献
Super high maximum on-state currents in 2D transistors
文献摘要：
Two-dimensional(2D)materials have been recognized as a type of potential channel material to replace silicon in fu-ture field-effect transistors(FETs)by the International Techno-logy Roadmap for Semiconductors(ITRS)and its succesor the International Roadmap for Devices and Systems(IRDS)[1-4].Sub-stantial first principle quantum transport simulations have pre-dicted that many 2D transistors,including those with MoS2,WSe2,phosphorene,and Bi2O2Se channels,own excellent device performance and are able to extend Moore's law down to the sub-10 nm scale[4].However,the actual 2D tran-sistors suffer from poor contact and dielectric[4].As a result,the maximum on-state currents(Ionmax)or saturation currents(Isat)of the fabricated 2D transistors are even generally lower than the on-state current(Ion)(＞1200 μA/μm)of the most ad-vanced silicon transistors.As we know,the on-state current is one of the most critical figure of merit of a FET required by ITRS and IRDS,and a large on-state current implies a fast switching speed.
文献关键词：
中图分类号：
作者姓名：
Xiaotian Sun;Qiuhui Li;Ruge Quhe;Yangyang Wang;Jing Lu
作者机构：
College of Chemistry and Chemical Engineering,and Henan Key Laboratory of Function-Oriented Porous Materials,Luoyang Normal University,Luoyang 471934,China;State Key Laboratory for Mesoscopic Physics and School of Physics,Peking University,Beijing 100871,China;State Key Laboratory of Information Photonics and Optical Communications and School of Science,Beijing University of Posts and Telecommunications,Beijing 100876,China;Qian Xuesen Laboratory of Space Technology,China Academy of Space Technology,Beijing 100094,China;Collaborative Innovation Center of Quantum Matter,Beijing 100871,China;Beijing Key Laboratory for Magnetoelectric Materialsand Devices(BKL-MEMD),Peking University,Beijing 100871,China;Peking University Yangtze Delta Institute of Optoelectronics,Nantong 226010,China;Key Laboratory for the Physics and Chemistry of Nanodevices,Peking University,Beijing 100871,China
文献出处：
引用格式：
[1]Xiaotian Sun;Qiuhui Li;Ruge Quhe;Yangyang Wang;Jing Lu-.Super high maximum on-state currents in 2D transistors)[J].半导体学报（英文版）,2022(12):9-11
A类：
Techno,succesor,IRDS,Bi2O2Se,sistors,Ionmax
B类：
Super,high,maximum,state,currents,2D,transistors,Two,dimensional,materials,have,been,recognized,type,potential,replace,silicon,fu,ture,field,effect,FETs,by,International,logy,Roadmap,Semiconductors,ITRS,its,Devices,Systems,Sub,stantial,first,principle,quantum,transport,simulations,pre,dicted,that,many,including,those,MoS2,WSe2,phosphorene,channels,excellent,device,performance,are,able,extend,Moore,law,down,sub,scale,However,actual,suffer,from,poor,contact,dielectric,result,saturation,Isat,fabricated,even,generally,lower,than,most,vanced,know,one,critical,figure,merit,required,large,implies,fast,switching,speed
AB值：
0.571228
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