InP-based quantum dot light-emitting diodes(QLEDs),as less toxic than Cd-free and Pb-free optoelectronic devices,have become the most promising benign alternatives for the next generation lighting and display.However,the development of green-emitting InP-based QLEDs still remains a great challenge to the environmental preparation of InP quantum dots(QDs)and superior device performance.Herein,we reported the highly efficient green-emitting InP-based QLEDs regulated by the inner alloyed shell components.Based on the environmental phosphorus tris(dimethylamino)phosphine((DMA)3P),we obtained highly efficient InP-based QDs with the narrowest full width at half maximum(～35 nm)and highest quantum yield(～97％)by inserting the gradient inner shell layer ZnSexS1-x without further post-treatment.More importantly,we concretely discussed the effect and physical mechanism of ZnSexS1-x layer on the performance of QDs and QLEDs through the characterization of structure,luminescence,femtosecond transient absorption,and ultraviolet photoelectron spectroscopy.We demonstrated that the insert inner alloyed shell ZnSexS1-x provided bifunctionality,which diminished the interface defects upon balancing the lattice mismatch and tailored the energy levels of InP-based QDs which could promote the balanced carrier injection.The resulting QLEDs applying the InP/ZnSe0.7S0.3/ZnS QDs as an emitter layer exhibited a maximum external quantum efficiency of 15.2％with the electroluminescence peak of 532 nm,which was almost the highest record of InP-based pure green-emitting QLEDs.These results demonstrated the applicability and processability of inner shell component engineering in the preparation of high-quallity InP-based QLEDs.

Peng Yu;Sheng Cao;Yuliang Shan;Yuhe Bi;Yaqi Hu;Ruosheng Zeng;Bingsuo Zou;Yunjun Wang;Jialong Zhao

School of Physical Science and Technology,MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials,Guangxi Key Laboratory of Processing for Non-Ferrous Metals and Featured Materials,Guangxi University,Nanning 530004,China;Suzhou Xingshuo Nanotech Co.,Ltd.(Mesolight),Suzhou 215123,China

光：科学与应用（英文版）

[1]Peng Yu;Sheng Cao;Yuliang Shan;Yuhe Bi;Yaqi Hu;Ruosheng Zeng;Bingsuo Zou;Yunjun Wang;Jialong Zhao-.Highly efficient green InP-based quantum dot light-emitting diodes regulated by inner alloyed shell component)[J].光：科学与应用（英文版）,2022(07):1454-1463

ZnSexS1,bifunctionality,ZnSe0,7S0,quallity

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