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典型文献
Observation of resistive switching in a graphite/hexagonal boron nitride/graphite heterostructure memristor
文献摘要:
With the atomically sharp interface and stable switching channel,van der Waals(vdW)heterostructure memristors have attracted extensive interests for the application of high-density memory and neuromorphic computing.Here,we demon-strate a new type of vdW heterostructure memristor device by sandwiching a single-crystalline h-BN layer between two thin graphites.In such a device,a stable bipolar resistive switching(RS)behavior has been observed for the first time.We also charac-terize their switching performance,and observe an on/off ratio of>103 and a minimum RESET voltage variation coefficient of 3.81%.Our work underscores the potential of 2D materials and vdW heterostructures for emerging memory and neuromorph-ic applications.
文献关键词:
作者姓名:
Yafeng Deng;Yixiang Li;Pengfei Wang;Shuang Wang;Xuan Pan;Dong Wang
作者机构:
Mechanical&Electrical Engineering College of Henan Agricultural University,Zhengzhou 450002,China;Institute of Brain-Inspired Intelligence,National Laboratory of Solid State Microstructures,School of Physics,Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China
引用格式:
[1]Yafeng Deng;Yixiang Li;Pengfei Wang;Shuang Wang;Xuan Pan;Dong Wang-.Observation of resistive switching in a graphite/hexagonal boron nitride/graphite heterostructure memristor)[J].半导体学报(英文版),2022(05):67-71
A类:
graphites,neuromorph
B类:
Observation,resistive,switching,hexagonal,boron,nitride,With,atomically,sharp,interface,stable,channel,van,Waals,vdW,memristors,have,attracted,extensive,interests,high,density,memory,neuromorphic,computing,Here,demon,strate,new,type,device,by,sandwiching,single,crystalline,BN,layer,between,two,thin,In,such,bipolar,RS,behavior,has,been,observed,first,We,also,charac,terize,their,performance,off,ratio,minimum,RESET,voltage,variation,coefficient,Our,work,underscores,potential,2D,materials,heterostructures,emerging,applications
AB值:
0.646458
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