典型文献
Molecular beam epitaxy growth of quantum devices
文献摘要：
The inherent fragility and surface/interface-sensitivity of quantum devices demand fabrication techniques under very clean environment.Here,I briefly introduces several techniques based on molecular beam epitaxy growth on pre-patterned substrates which enable us to directly prepare in-plane nanostructures and heterostructures in ultrahigh vacuum.The molec-ular beam epitaxy-based fabrication techniques are especially useful in constructing the high-quality devices and circuits for solid-state quantum computing in a scalable way.
文献关键词：
中图分类号：
作者姓名：
Ke He
作者机构：
State Key Laboratory of Low-Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing 100084,China;Frontier Science Center for Quantum Information,Beijing 100084,China;Beijing Institute of Quantum Information Science,Beijing 100193,China
文献出处：
引用格式：
[1]Ke He-.Molecular beam epitaxy growth of quantum devices)[J].中国物理B（英文版）,2022(12):40-43
A类：
B类：
Molecular,beam,epitaxy,growth,quantum,devices,inherent,fragility,surface,interface,sensitivity,demand,fabrication,techniques,under,very,clean,environment,Here,briefly,introduces,several,molecular,patterned,substrates,which,enable,directly,prepare,plane,nanostructures,heterostructures,ultrahigh,vacuum,especially,useful,constructing,quality,circuits,solid,state,computing,scalable,way
AB值：
0.620965
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