典型文献
Surface properties of Al-doped ZnO thin film before and after CF4/Ar plasma etching
文献摘要：
Al-doped ZnO(AZO)is considered as an alternative to transparent conductive oxide materials.Patterning and achieving a stable surface are important challenges in the development and optimization of dry etching processes,which must be overcome for the application of AZO in various devices.Therefore,in this study,the etch rate and surface properties of an AZO thin film after plasma etching using the adaptive coupled plasma system were investigated.The fastest etch rate was achieved with a CF4/Ar ratio of 50:50 sccm.Regardless of the ratio of CF4 to Ar,the transmittance of the film in the visible region exceeded 80％.X-ray photoelectron spectroscopy analysis of the AZO thin film confirmed that metal-F bonding persists on the surface after plasma etching.It was also shown that F eliminates O vacancies.Consequently,the work function and bandgap energy increased as the ratio of CF4 increased.This study not only provides information on the effect of plasma on AZO thin film,but identifies the cause of changes in the device characteristics during device fabrication.
文献关键词：
中图分类号：
作者姓名：
Young-Hee JOO;Gwan-Ha KIM;Doo-Seung UM;Chang-Il KIM
作者机构：
School of Electrical and Electronics Engineering,Chung-Ang University,Seoul 06974,Republic of Korea;Department of Semiconductor Materials and Applications,Korea Polytechnic,Seongnam 13122,Republic of Korea;Department of Electrical Engineering,Sejong University,Seoul 05006,Republic of Korea
文献出处：
引用格式：
[1]Young-Hee JOO;Gwan-Ha KIM;Doo-Seung UM;Chang-Il KIM-.Surface properties of Al-doped ZnO thin film before and after CF4/Ar plasma etching)[J].等离子体科学和技术（英文版）,2022(07):194-200
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B类：
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AB值：
0.552473
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