典型文献
AgGeSbTe thin film as a negative heat-mode resist for dry lithography
文献摘要：
An AgGeSbTe thin film is proposed as a negative heat-mode resist for dry lithography.It possesses high etching selectivity with the etching rate difference of as high as 62 nm/min in CHF3/O2 mixed gases.The etched sidewall is steep without the obvious lateral corrosion.The lithographic characteristics and underlying physical mechanisms are analyzed.Besides,results of X-ray diffraction,Raman spectroscopy,and X-ray photoelectron spectroscopy further indicate that laser irra-diation causes the formation of Ge,Sb,and AgTe crystals,which is the basis of etching selectivity.In addition,the etching selectivity of Si to AgGeSbTe resist is as high as 19 at SF6/Ar mixed gases,possessing good etching resistance.It is believed that the AgGeSbTe thin film is a promising heat-mode resist for dry lithography.
文献关键词：
中图分类号：
作者姓名：
Xingwang Chen;Lei Chen;Ying Wang;Tao Wei;Jing Hu;Miao Cheng;qianqian Liu;Wanfei Li;Yun Ling;Bo Liu
作者机构：
Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices,School of Materials Science and Engineering,Suzhou University of Science and Technology,Suzhou 215009,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;School of Electronic&Information Engineering,Suzhou University of Science and Technology,Suzhou 215009,China
文献出处：
引用格式：
[1]Xingwang Chen;Lei Chen;Ying Wang;Tao Wei;Jing Hu;Miao Cheng;qianqian Liu;Wanfei Li;Yun Ling;Bo Liu-.AgGeSbTe thin film as a negative heat-mode resist for dry lithography)[J].中国光学快报（英文版）,2022(03):72-76
A类：
AgGeSbTe,lithographic,AgTe
B类：
thin,film,negative,heat,mode,dry,lithography,An,proposed,It,possesses,high,etching,selectivity,rate,difference,CHF3,O2,mixed,gases,etched,sidewall,steep,without,obvious,lateral,corrosion,characteristics,underlying,physical,mechanisms,are,analyzed,Besides,results,ray,diffraction,Raman,spectroscopy,photoelectron,further,indicate,that,laser,irra,diation,causes,formation,crystals,which,basis,In,addition,Si,SF6,Ar,possessing,good,resistance,believed,promising
AB值：
0.475804
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