典型文献
Simulation of MoS2 stacked nanosheet field effect transistor
文献摘要：
Transition metal dichalcogenides are nowadays appealing to researchers for their excellent electronic properties.Ver-tical stacked nanosheet FET(NSFET)based on MoS2 are proposed and studied by Poisson equation solver coupled with semi-classical quantum correction model implemented in Sentaurus workbench.It is found that,the 2D stacked NSFET can largely suppress short channel effects with improved subthreshold swing and drain induced barrier lowering,due to the excellent elec-trostatics of 2D MoS2.In addition,small-signal capacitance is extracted and analyzed.The MoS2 based NSFET shows great poten-tial to enable next generation electronics.
文献关键词：
中图分类号：
作者姓名：
Yang Shen;He Tian;Tianling Ren
作者机构：
School of Integrated Circuits and Beijing National Research Center for Information Science and Technology(BNRist),Tsinghua University,Beijing 100084,China
文献出处：
引用格式：
[1]Yang Shen;He Tian;Tianling Ren-.Simulation of MoS2 stacked nanosheet field effect transistor)[J].半导体学报（英文版）,2022(08):43-47
A类：
NSFET,trostatics
B类：
Simulation,MoS2,stacked,nanosheet,field,transistor,Transition,metal,dichalcogenides,are,nowadays,appealing,researchers,their,excellent,properties,Ver,tical,proposed,studied,by,Poisson,equation,solver,coupled,semi,classical,quantum,correction,model,implemented,Sentaurus,workbench,It,found,that,2D,can,largely,suppress,short,channel,effects,improved,subthreshold,swing,drain,induced,barrier,lowering,due,In,addition,small,signal,capacitance,extracted,analyzed,shows,great,poten,tial,enable,next,generation,electronics
AB值：
0.680015
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机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
