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典型文献
Avalanche photodiodes on silicon photonics
文献摘要:
Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits.The Ge-or Ⅲ-Ⅴ material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication wavelengths.Herein,the last advances of monolithic and hetero-geneous avalanche photodiodes on silicon are reviewed,including different device structures and semiconductor systems.
文献关键词:
作者姓名:
Yuan Yuan;Bassem Tossoun;Zhihong Huang;Xiaoge Zeng;Geza Kurczveil;Marco Fiorentino;Di Liang;Raymond G.Beausoleil
作者机构:
Hewlett Packard Labs,Hewlett Packard Enterprise,Milpitas,CA 95035,USA
引用格式:
[1]Yuan Yuan;Bassem Tossoun;Zhihong Huang;Xiaoge Zeng;Geza Kurczveil;Marco Fiorentino;Di Liang;Raymond G.Beausoleil-.Avalanche photodiodes on silicon photonics)[J].半导体学报(英文版),2022(02):13-25
A类:
B类:
Avalanche,photodiodes,silicon,photonics,Silicon,technology,has,drawn,significant,interest,due,potential,compact,high,performance,integrated,circuits,Ge,material,avalanche,provide,ideal,sensitivity,optical,receivers,telecommunication,wavelengths,Herein,last,advances,monolithic,hetero,geneous,are,reviewed,including,different,device,structures,semiconductor,systems
AB值:
0.674849
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