首站-论文投稿智能助手
典型文献
Nonlinear optical properties in n-type quadruple δ-doped GaAs quantum wells
文献摘要:
The effects of the interlayer distance on the nonlinear optical properties of n-type quadruple δ-doped GaAs quantum well were theoretically investigated.Particularly,the absorption coefficient and the relative refraction index change were determined.In the effective mass approach and within the framework of the Thomas-Fermi theory,the Schr?dinger equa-tion was resolved.Thereby,the subband energy levels and their respective wave functions were calculated.The variations in the nonlinear optical properties were determined by using the density matrix solutions.The achieved results demonstrate that the interlayer distance causes optical red-shift on nonlinear optical properties.Therefore,it can be deduced that the suit-ably chosen interlayer distance can be used to tune optical properties within the infrared spectrum region in optoelectronic devices such as far-infrared photo-detectors,high-speed electronic-optical modulators,and infrared lasers.
文献关键词:
作者姓名:
Humberto Noverola-Gamas;Luis Manuel Gaggero-Sager;Outmane Oubram
作者机构:
División Académica de Ingeniería y Arquitectura,Universidad Juárez Autónoma de Tabasco,Carretera Cunduacán-Jalpa de Méndez Km.1 Col.La Esmeralda,Cunduacán,8660,México;Centro de Investigación en Ingeniería y Ciencias Aplicadas,Universidad Autónoma del Estado de Morelos,Av.Universidad 1001 Col.Chamilpa,Cuernavaca,62209,México;Facultad de Ciencias Químicas e Ingeniería,Universidad Autónoma del Estado de Morelos,Av.Universidad 1001 Col.Chamilpa,Cuernavaca,62209,México
引用格式:
[1]Humberto Noverola-Gamas;Luis Manuel Gaggero-Sager;Outmane Oubram-.Nonlinear optical properties in n-type quadruple δ-doped GaAs quantum wells)[J].中国物理B(英文版),2022(04):393-396
A类:
subband
B类:
Nonlinear,optical,properties,type,quadruple,doped,GaAs,quantum,wells,effects,interlayer,distance,nonlinear,were,theoretically,investigated,Particularly,absorption,coefficient,relative,refraction,change,determined,In,effective,mass,approach,within,framework,Thomas,Fermi,theory,Schr,dinger,equa,was,resolved,Thereby,energy,levels,their,respective,wave,functions,calculated,variations,using,density,matrix,solutions,achieved,results,demonstrate,that,causes,shift,Therefore,can,be,deduced,suit,ably,chosen,used,tune,infrared,spectrum,region,optoelectronic,devices,such,far,photo,detectors,high,speed,modulators,lasers
AB值:
0.605764
相似文献
Highly transmitted silver nanowires-SWCNTs conductive flexible film by nested density structure and aluminum-doped zinc oxide capping layer for flexible amorphous silicon solar cells
Shunliang Gao;Xiaohui Zhao;Qi Fu;Tianchi Zhang;Jun Zhu;Fuhua Hou;Jian Ni;Chengjun Zhu;Tiantian Li;Yanlai Wang;Vignesh Murugadoss;Gaber A.M.Mersal;Mohamed M.Ibrahim;Zeinhom M.El-Bahy;Mina Huang;Zhanhu Guo-The Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongolia Autonomous Region,College of Physical Science and Technology,Inner Mongolia University,Hohhot 010021,China;Department of Electronic Science and Technology,School of Electronic Information and Optical Engineering,Nankai University,Tianjin 300350,China;Advanced Materials Division,Engineered Multifunctional Composites(EMC)Nanotech LLC,Knoxville,TN 37934,United States;Integrated Composites Laboratory(ICL),Department of Chemical and Bimolecular Engineering,University of Tennessee,Knoxville,TN 37996,United States;Department of Chemistry,College of Science,Taif University,P.O.Box 11099,Taif 21944,Saudi Arabia;Department of Chemistry,Faculty of Science,Al-Azhar University,Nasr City 11884,Cairo,Egypt;College of Materials Science and Engineering,Taiyuan University of Science and Technology,Taiyuan 030024,China
Revealing the nature of optical activity in carbon dots produced from different chiral precursor molecules
Ananya Das;Evgeny V.Kundelev;Anna A.Vedernikova;Sergei A.Cherevkov;Denis V.Danilov;Aleksandra V.Koroleva;Evgeniy V.Zhizhin;Anton N.Tsypkin;Aleksandr P.Litvin;Alexander V.Baranov;Anatoly V.Fedorov;Elena V.Ushakova;Andrey L.Rogach-Center of Information Optical Technologies,ITMO University,Saint Petersburg 197101,Russia;Research Park,Saint Petersburg State University,Saint Petersburg 199034,Russia;Laboratory of Femtosecond Optics and Femtotechnology,ITMO University,Saint Petersburg 197101,Russia;Laboratory of Quantum Processes and Measurements,ITMO University,Saint Petersburg 197101,Russia;Department of Materials Science and Engineering,and Centre for Functional Photonics(CFP),City University of Hong Kong,Kowloon,Hong Kong SAR 999077,China;Shenzhen Research Institute,City University of Hong Kong,Shenzhen 518057,China
Structural and optical properties evolution in pressure-induced amorphization of metal-organic framework ZIF-8
Xin Huang;Jin He;Yiguang Jiang;Zhuocheng Chen;Xing Duan;Long Zhang-CAS Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China;College of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences (UCAS), Beijing 100049, China;Hangzhou Institute for Advanced Study, UCAS, Hangzhou 310024, China;School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai 200093, China;Center of Advanced Optoelectronic Materials and Devices, Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China;Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai 200240, China
Structural and optical properties evolution in pressure-induced amorphization of metal-organic framework ZIF-8
Xin Huang;Jin He;Yiguang Jiang;Zhuocheng Chen;Xing Duan;Long Zhang-CAS Key Laboratory of Materials for High Power Laser,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;College of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences[UCAS],Beijing 100049,China;Hangzhou Institute for Advanced Study,UCAS,Hangzhou 310024,China;School of Materials and Chemistry,University of Shanghai for Science and Technology,Shanghai 200093,China;Center of Advanced Optoelectronic Materials and Devices,Key Laboratory of Novel Materials for Sensor of Zhejiang Province,College of Materials and Environmental Engineering,Hangzhou Dianzi University,Hangzhou 310018,China;Collaborative Innovation Center of IFSA[CICIFSA],Shanghai Jiao Tong University,Shanghai 200240,China
Development of RuS2 for near-infrared photodetector by atomic layer deposition and post-sulfurization
Tatsuya Nakazawa;Donghyun Kim;Jaehyeok Kim;Yohei Kotsugi;Taehoon Cheon;Seung-Min Chung;Soo-Hyun Kim;Hyungjun Kim-School of Electrical and Electronic Engineering,Yonsei University,Seoul 03722,Korea;Isehara Technical Center,Metallic Materials Development Department,TANAKA Kikinzoku Kogyo K.K,Isehara,Kanagawa 259-1146,Japan;Institute of Materials Technology,Yeungnam University,Gyeongsan-si 38541,Gyeongbuk,Korea;Chemical Materials Development Department,TANAKA Kikinzoku Kogyo K.K,Tsukuba Technical Center,Ibaraki 300-4247,Japan;School of Materials Science and Engineering,Yeungnam University,Gyeongsan-si 38541,Gyeongbuk,Korea;Center for Core Research Facilities,Daegu Gyeongbuk Institute of Science&Technology,Daegu 711-873,Korea
机标中图分类号,由域田数据科技根据网络公开资料自动分析生成,仅供学习研究参考。