典型文献
Research on quantum well intermixing of 680 nm AIGalnP/GalnP semiconductor lasers induced by composited Si-Si3N4 dielectric layer
文献摘要：
The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AIGalnP/GalnP quantum well red semiconductor lasers,Si-Si3N4 composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si3N4 with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffu-sion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this pa-per realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600℃and an-nealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The applica-tion of this process condition can reduce the difficulty of production and save cost,which provides an effective method for up-coming fabrication.
文献关键词：
中图分类号：
作者姓名：
Tianjiang He;Suping Liu;Wei Li;Cong Xiong;Nan Lin;Li Zhong;Xiaoyu Ma
作者机构：
National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Optoelectronics,University of Chinese Academy of Sciences,Beijing 100049,China
文献出处：
引用格式：
[1]Tianjiang He;Suping Liu;Wei Li;Cong Xiong;Nan Lin;Li Zhong;Xiaoyu Ma-.Research on quantum well intermixing of 680 nm AIGalnP/GalnP semiconductor lasers induced by composited Si-Si3N4 dielectric layer)[J].半导体学报（英文版）,2022(08):49-55
A类：
intermixing,AIGalnP,GalnP,intermixed,nonabsorbent
B类：
Research,quantum,semiconductor,lasers,induced,by,composited,Si3N4,dielectric,optical,catastrophic,damage,that,usually,occurs,cavity,surface,has,become,bottleneck,affecting,improvement,output,power,long,reliability,To,layers,used,its,wells,make,absorption,window,thickness,were,grown,epitaxial,wafer,magnetron,sputtering,PECVD,diffu,sion,source,driving,respectively,Compared,traditional,impurity,this,realizes,blue,shift,region,lower,annealing,temperature,Under,condition,wavelength,gain,luminescence,basically,does,not,short,morphology,whole,remains,fine,after,applica,process,can,reduce,difficulty,production,save,cost,which,provides,effective,method,up,coming,fabrication
AB值：
0.47916
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