首站-论文投稿智能助手
典型文献
High effiiciency pure blue perovskite quantum dot light-emitting diodes based on formamidinium manipulating carrier dynamics and electron state filling
文献摘要:
Achieving high efficiency and stable pure blue colloidal perovskite quantum dot(QD)light-emitting diodes(LEDs)is still an enormous challenge because blue emitters typically exhibit high defect density,low photoluminescence quantum yield(PLQY)and easy phase dissociation.Herein,an organic cation composition modification strategy is used to synthesize high-performance pure blue perovskite quantum dots at room temperature.The synthesized FA-CsPb(Clo.5Bro.5)3 QDs show a bright photoluminescence with a high PLQY(65%),which is 6 times higher than the undoped samples.In addition,the photophysical properties of the FA cation doping was deeply illustrated through carrier dynamics and first principal calculation,which show lower defects,longer lifetime,and more reasonable band gap structure than undoped emitters.Consequently,pure blue FA-CsPb(Cl0.5Br0.5)3 QDs light-emitting devices were fabricated and presented a maximum luminance of 1452 cd m-2,and an external quantum efficiency of 5.01%with an emission at 474 nm.The excellent photoelectric properties mainly originate from the enhanced blue QDs emitter and effective charge injection and exciton radiation.Our finding underscores this easy and feasible room temperature doping approach as an alternative strategy to blue perovskite QD LED development.
文献关键词:
作者姓名:
Long Gao;Yilin Zhang;Lijie Gou;Qian Wang;Meng Wang;Weitao Zheng;Yinghui Wang;Hin-Lap Yip;Jiaqi Zhang
作者机构:
College of Materials Science and Engineering,Key Laboratory of Automobile Materials,Ministry of Education,Jilin University,Changchun 130012,China;Femtosecond Laser laboratory,Key Laboratory of Physics and Technology for Advanced Batteries,Ministry of Education,College of Physics,Jilin University,Changchun 130012,China;Department of Materials Science and Engineering,City University of Hong Kong,Kowloon,Hong Kong,China;School of Energy and Environment,City University of Hong Kong,Kowloon,Hong Kong,China;Hong Kong Institute for Clean Energy,City University of Hong Kong,Kowloon,Hong Kong,China
引用格式:
[1]Long Gao;Yilin Zhang;Lijie Gou;Qian Wang;Meng Wang;Weitao Zheng;Yinghui Wang;Hin-Lap Yip;Jiaqi Zhang-.High effiiciency pure blue perovskite quantum dot light-emitting diodes based on formamidinium manipulating carrier dynamics and electron state filling)[J].光:科学与应用(英文版),2022(12):3087-3097
A类:
5Bro
B类:
High,effiiciency,pure,blue,perovskite,quantum,light,emitting,diodes,formamidinium,manipulating,carrier,dynamics,electron,state,filling,Achieving,efficiency,stable,colloidal,LEDs,still,enormous,challenge,because,emitters,typically,exhibit,density,photoluminescence,yield,PLQY,easy,phase,dissociation,Herein,organic,composition,modification,strategy,used,performance,dots,room,temperature,synthesized,FA,CsPb,Clo,QDs,show,bright,which,times,higher,than,undoped,samples,In,addition,photophysical,properties,doping,was,deeply,illustrated,through,first,principal,calculation,lower,defects,longer,lifetime,more,reasonable,band,gap,structure,Consequently,Cl0,5Br0,devices,were,fabricated,presented,maximum,luminance,cd,external,emission,excellent,photoelectric,mainly,originate,from,enhanced,effective,charge,injection,exciton,radiation,Our,finding,underscores,this,feasible,approach,alternative,development
AB值:
0.589149
相似文献
Surface ligand modified cesium lead bromide/silica sphere composites for low-threshold upconversion lasing
QIAN XIONG;SIHAO HUANG;ZIJUN ZHAN;JUAN DU;XIAOSHENG TANG;ZHIPING HU;ZHENGZHENG LIU;ZEYU ZHANG;WEIWEI CHEN;YUXIN LENG-State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science,Shanghai Institute of Optics and Fine Mechanics(SIOM),Chinese Academy of Sciences(CAS),Shanghai 201800,China;Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China;School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;School of Physics and Electronics,Shandong Normal University,Jinan 250014,China;College of Optoelectronic Engineering,Chongqing University of Post and Telecommunications,Chongqing 400065,China
Light-emitting field-effect transistors with EQE over 20% enabled by a dielectric-quantum dots-dielectric sandwich structure
Lingmei Kong;Jialong Wu;Yunguo Li;Fan Cao;Feijiu Wang;Qianqian Wu;Piaoyang Shen;Chengxi Zhang;Yun Luo;Lin Wang;Lyudmila Turyanska;Xingwei Ding;Jianhua Zhang;Yongbiao Zhao;Xuyong Yang-Key Laboratory of Advanced Display and System Applications of Ministry of Education,Shanghai University,Shanghai 200072,China;CAS Key Laboratory of Crust-Mantle Materials and Environments,School of Earth and Space Sciences,University of Science and Technology of China,Hefei 230026,China;Henan Key Laboratory of Photovoltaic Materials,Henan University,Kaifeng 475004,China;Faculty of Engineering,University of Nottingham,Nottingham NG72RD,UK;Center for Optoelectronic Engineering Research,Department of Physics,School of Physics and Astronomy,Yunnan University,Kunming 650091,China
机标中图分类号,由域田数据科技根据网络公开资料自动分析生成,仅供学习研究参考。