典型文献
Vertical Schottky ultraviolet photodetector based on graphene and top-down fabricated GaN nanorod arrays
文献摘要：
GaN has been widely used in the fabrication of ultraviolet photodetectors because of its outstanding properties.In this paper,we report a graphene-GaN nanorod heterostructure photodetector with fast photoresponse in the UV range.GaN nanorods were fabricated by a combination mode of dry etching and wet etching.Furthermore,a graphene-GaN nanorod het-erostructure ultraviolet detector was fabricated and its photoelectric properties were measured.The device exhibits a fast photoresponse in the UV range.The rising time and falling time of the transient response were 13 and 8 ms,respectively.A high photovoltaic responsivity up to 13.9 A/W and external quantum efficiency up to 479％were realized at the UV range.The specific detectivity D*=1.44×1010 Jones was obtained at-1 V bias in ambient conditions.The spectral response was meas-ured and the highest response was observed at the 360 nm band.
文献关键词：
中图分类号：
作者姓名：
Xuemin Zhang;Changling Yan;Jinghang Yang;Chao Pang;Yunzhen Yue;Chunhong Zeng;Baoshun Zhang
作者机构：
State Key Laboratory on High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China;Nanofabrication Facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China
文献出处：
引用格式：
[1]Xuemin Zhang;Changling Yan;Jinghang Yang;Chao Pang;Yunzhen Yue;Chunhong Zeng;Baoshun Zhang-.Vertical Schottky ultraviolet photodetector based on graphene and top-down fabricated GaN nanorod arrays)[J].半导体学报（英文版）,2022(06):75-81
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0.508692
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