典型文献
Chemical vapor deposition growth and transport properties of MoS2-2H thin layers using molybdenum and sulfur as precursors
文献摘要：
This paper introduces a feasible process to achieve the molybdenum disulfide atomic layers using chemical vapor deposition(CVD)method,with molybde-num thin film and solid sulfur as precursors.And some improvements were made to reduce the amount of meta-stable MoS2-3R.The morphology of the acquired MoS2 layers,existing as triangular flakes or large-area continuous films,can be controlled by adjusting the synthesis time and reacting temperature.The characterization results show that the monolayer MoS2 flakes reveal a(002)-oriented growth on SiO2/Si substrates,and its crystalline domain size is approximately 30 pm,and the thickness is 0.65 nm.Since the synthesis of MoS2-3R is restrained,the elec-tronic transport properties of MoS2 with different layers were investigated,revealing that those properties equal with those of MoS2 samples prepared by exfoliation methods.
文献关键词：
中图分类号：
作者姓名：
Zhi-Tian Shi;Hong-Bin Zhao;Xiao-Qiang Chen;Ge-Ming Wu;Feng Wei;Hai-Ling Tu
作者机构：
Advanced Electronic Materials Institute,General Research Institute for Nonferrous Metals,Beijing 100088,China;National Engineering Research Center for Semiconductor Materials,General Research Institute for Nonferrous Metals,Beijing 100088,China
文献出处：
引用格式：
[1]Zhi-Tian Shi;Hong-Bin Zhao;Xiao-Qiang Chen;Ge-Ming Wu;Feng Wei;Hai-Ling Tu-.Chemical vapor deposition growth and transport properties of MoS2-2H thin layers using molybdenum and sulfur as precursors)[J].稀有金属（英文版）,2022(10):3574-3578
A类：
molybde
B类：
Chemical,vapor,deposition,growth,transport,properties,MoS2,2H,thin,layers,using,molybdenum,sulfur,precursors,This,paper,introduces,feasible,process,achieve,disulfide,atomic,chemical,CVD,solid,And,some,improvements,were,made,reduce,amount,meta,stable,3R,morphology,acquired,existing,triangular,flakes,large,area,continuous,films,can,be,controlled,by,adjusting,synthesis,reacting,temperature,characterization,results,show,that,monolayer,oriented,SiO2,substrates,its,crystalline,domain,size,approximately,pm,thickness,Since,restrained,elec,tronic,different,investigated,revealing,those,equal,samples,prepared,exfoliation,methods
AB值：
0.603048
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