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典型文献
Inhomogeneous strain and doping of transferred CVD-grown graphene
文献摘要:
Chemical vapor deposition(CVD)-grown graphene on copper foils is subject to the Cu substrate,which affects the spatial distribution of strain and doping,thus influencing the electronic properties of graphene.However,plenty of electronic devices based on CVD-grown graphene require transfer process and the distribution of doping and strain in CVD-grown graphene transferred onto the insulating sub-strates remains elusive.In this work,we focus on the graphene islands grown on polycrystalline copper foil and transferred to SiO2/Si substrate.We find that the distribu-tion of doping and strain in transferred graphene islands grown on polycrystalline copper foil are spatially inho-mogeneous.
文献关键词:
作者姓名:
Yu-Ting Niu;Fang-Zhu Qing;Xue-Song Li;Bo Peng
作者机构:
National Engineering Research Center of Electromagnetic Radiation Control Materials,University of Electronic Science and Technology of China,Chengdu 611731,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,China;School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China;Shenzhen Institute for Advanced Study,University of Electronic Science and Technology of China,Shenzhen 518110,China
引用格式:
[1]Yu-Ting Niu;Fang-Zhu Qing;Xue-Song Li;Bo Peng-.Inhomogeneous strain and doping of transferred CVD-grown graphene)[J].稀有金属(英文版),2022(05):1727-1734
A类:
inho,mogeneous
B类:
Inhomogeneous,strain,doping,transferred,CVD,grown,graphene,Chemical,vapor,deposition,copper,foils,subject,substrate,which,affects,distribution,thus,influencing,electronic,properties,However,plenty,devices,require,process,onto,insulating,strates,remains,elusive,this,work,focus,islands,polycrystalline,SiO2,We,find,that,are,spatially
AB值:
0.421866
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