典型文献
First principles study of field effect device through van der Waals and lateral heterostructures of graphene,phosphorene and graphane
文献摘要：
Chemical modification and vertical stacking of two-dimensional materials are promising techniques for new nanoelectronic devices.We present Density Functional Tight Binding(DFTB)calculations of a field-effect device,based on lateral and vertical heterostructures of 2D materials.The device consists of a phosphorene channel protected by graphene sheets,which work as contacts and are divided into the source and drain by local hy-drogenation of graphene,which gives insulating graphane.In this device composed of only 3 layers,single sheets of graphene-graphane can work as both leads and oxide gate,while also acting as protective layers for a phos-phorene channel.We show how for perfect vdW heterostructures of graphane/phosphorene/graphane and gra-phene/phosphorene/graphene the Schottky barrier is deeply influenced by normal electric fields,and we characterize electronic transport of such a device.Finally,we characterize phosphorene channel doping and defects,which,at very high densities in the transport direction,enables transport inside the phosphorene bandgap.
文献关键词：
中图分类号：
作者姓名：
C.Rebolledo Espinoza;D.A.Ryndyk;A.Dianat;R.Gutierrez;G.Cuniberti
作者机构：
Chair of Materials Science and Nanotechnology,TU Dresden,01069,Dresden,Germany
文献出处：
引用格式：
[1]C.Rebolledo Espinoza;D.A.Ryndyk;A.Dianat;R.Gutierrez;G.Cuniberti-.First principles study of field effect device through van der Waals and lateral heterostructures of graphene,phosphorene and graphane)[J].纳米材料科学（英文版）,2022(01):52-59
A类：
graphane,nanoelectronic,DFTB,drogenation,phorene
B类：
First,principles,study,effect,through,van,der,Waals,lateral,heterostructures,graphene,phosphorene,Chemical,modification,vertical,stacking,two,dimensional,materials,are,promising,techniques,new,devices,We,present,Density,Functional,Tight,Binding,calculations,2D,consists,channel,protected,by,sheets,which,work,contacts,divided,into,source,drain,local,hy,gives,insulating,In,this,composed,only,layers,single,can,both,leads,oxide,gate,while,also,acting,protective,show,perfect,vdW,Schottky,barrier,deeply,influenced,normal,electric,fields,we,characterize,transport,such,Finally,doping,defects,very,high,densities,direction,enables,inside,bandgap
AB值：
0.520168
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