典型文献
Fabrication of Si3N4/Cu direct-bonded heterogeneous interface assisted by laser irradiation
文献摘要：
Joining of ceramic and metal is a key component in microelectronic device manufacturing,in which the integrity of bonded interface is critical in the performance and stability of the devices.Current meth-ods with a problem of thick transition layer at the interface impeded heat flow,which degraded device service life seriously.Herein,we propose a laser-assisted bonding approach to join ceramic to metal di-rectly without any intermediate material.By focusing the laser on the surface of β-Si3N4 ceramic,the Si microcrystalline layer with stacked α-Si3N4 nanocrystals was prepared first.The face-centered cubic(fcc)Si and hexagonal close-packed(hcp)β-Si3N4 substrate take the coherent orientation relations of[001]fcc ‖[0001]hcp and(220)fcc‖(10(1)0)hcp.Then,the defect-free Si3N4/Cu bonded interface obtained by the reaction of the formed Si and Cu at elevated temperature in the 805-900℃range for 30 min demonstrated a strong and stable joining of ceramic to metal.The introduction of the laser provides a novel approach to join ceramics to metals,and the ceramic/metal component is expected to be a new configuration for package substrate in high-power device applications.
文献关键词：
中图分类号：
作者姓名：
Yanyu Song;Duo Liu;Guobiao Jin;Haitao Zhu;Naibin Chen;Shengpeng Hu;Xiaoguo Song;Jian Cao
作者机构：
State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Harbin 150001,China;Shandong Provincial Key Lab of Special Welding Technology,Harbin Institute of Technology at Weihai,Weihai 264209,China
文献出处：
引用格式：
[1]Yanyu Song;Duo Liu;Guobiao Jin;Haitao Zhu;Naibin Chen;Shengpeng Hu;Xiaoguo Song;Jian Cao-.Fabrication of Si3N4/Cu direct-bonded heterogeneous interface assisted by laser irradiation)[J].材料科学技术（英文版）,2022(04):169-177
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B类：
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AB值：
0.564884
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