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典型文献
Revealing layer-dependent interlayer interactions by doping effect on graphene in WSe2/N-layer graphene heterostructures using Raman and photoluminescence spectroscopy
文献摘要:
Assembling layered materials in the form of vertically stacked heterostructures has enabled the combination of various properties from different two-dimensional(2D)materials,which is receiving a great deal of attention for investigating novel physical phenomena and emerging a facile way to fabricate promising highly tailored architec-tures.In this study,we employ Raman and photolumines-cence(PL)spectroscopy to systematically investigate the influence of thickness on interlayer interaction in WSe2/n-layer graphene(WSe2/nL-Gr,n=1,2,3,4)heterostruc-tures.It is found that the charge carrier concentration of graphene can be significantly affected by distinct interlayer coupling originated from heterostructure interface.
文献关键词:
作者姓名:
Ya-Bing Shan;Xiao-Fei Yue;Jia-Jun Chen;Jin-Kun Han;Garel Ekoya;Lai-Gui Hu;Ran Liu;Zhi-Jun Qiu;Chun-Xiao Cong
作者机构:
School of Information Science and Technology,Fudan University,Shanghai 200433,China;Yiwu Research Institute of Fudan University,Yiwu 322000,China;Academy for Engineering and Technology,Fudan University,Shanghai 200433,China
引用格式:
[1]Ya-Bing Shan;Xiao-Fei Yue;Jia-Jun Chen;Jin-Kun Han;Garel Ekoya;Lai-Gui Hu;Ran Liu;Zhi-Jun Qiu;Chun-Xiao Cong-.Revealing layer-dependent interlayer interactions by doping effect on graphene in WSe2/N-layer graphene heterostructures using Raman and photoluminescence spectroscopy)[J].稀有金属(英文版),2022(11):3646-3653
A类:
photolumines
B类:
Revealing,dependent,interlayer,interactions,by,doping,effect,graphene,WSe2,heterostructures,using,Raman,photoluminescence,spectroscopy,Assembling,layered,materials,form,vertically,stacked,has,enabled,combination,various,properties,from,different,two,dimensional,2D,which,receiving,great,deal,attention,investigating,novel,physical,phenomena,emerging,facile,way,fabricate,promising,highly,tailored,architec,In,this,study,we,employ,PL,systematically,investigate,influence,thickness,nL,Gr,It,found,that,charge,carrier,concentration,be,significantly,affected,distinct,coupling,originated,interface
AB值:
0.652915
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