典型文献
Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits
文献摘要：
Discrimination of dislocations is critical to the statistics of dislocation densities in 4H silicon carbide(4H-SiC),which are routinely used to evaluate the quality of 4H-SiC single crystals and homoepitaxial layers.In this work,we show that the inclin-ation angles of the etch pits of molten-alkali etched 4H-SiC can be adopted to discriminate threading screw dislocations(TSDs),threading edge dislocations(TEDs)and basal plane dislocations(BPDs)in 4H-SiC.In n-type 4H-SiC,the inclination angles of the etch pits of TSDs,TEDs and BPDs in molten-alkali etched 4H-SiC are in the ranges of 27°-35°,8°-15° and 2°-4°,respectively.In semi-insulating 4H-SiC,the inclination angles of the etch pits of TSDs and TEDs are in the ranges of 31°-34° and 21°-24°,respect-ively.The inclination angles of dislocation-related etch pits are independent of the etching duration,which facilitates the discrim-ination and statistic of dislocations in 4H-SiC.More significantly,the inclination angle of a threading mixed dislocations(TMDs)is found to consist of characteristic angles of both TEDs and TSDs.This enables to distinguish TMDs from TSDs in 4H-SiC.
文献关键词：
中图分类号：
作者姓名：
Guang Yang;Hao Luo;Jiajun Li;Qinqin Shao;Yazhe Wang;Ruzhong Zhu;Xi Zhang;Lihui Song;Yiqiang Zhang;Lingbo Xu;Can Cui;Xiaodong Pi;Deren Yang;Rong Wang
作者机构：
Key Laboratory of Optical Field Manipulation of Zhejiang Province,Department of Physics,Zhejiang Sci-Tech University,Hangzhou 310018,China;State Key Laboratory of Silicon Materials and School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China;Hangzhou Innovation Center,Zhejiang University,Hangzhou 311200,China;School of Materials Science and Engineering&Henan Institute of Advanced Technology,Zhengzhou University,Zhengzhou 450001,China
文献出处：
引用格式：
[1]Guang Yang;Hao Luo;Jiajun Li;Qinqin Shao;Yazhe Wang;Ruzhong Zhu;Xi Zhang;Lihui Song;Yiqiang Zhang;Lingbo Xu;Can Cui;Xiaodong Pi;Deren Yang;Rong Wang-.Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits)[J].半导体学报（英文版）,2022(12):77-83
A类：
homoepitaxial,inclin,TSDs,BPDs,discrim
B类：
Discrimination,dislocations,4H,SiC,by,inclination,angles,molten,alkali,etched,pits,critical,statistics,densities,silicon,carbide,which,are,routinely,used,evaluate,quality,single,crystals,layers,In,this,work,we,show,that,be,adopted,discriminate,threading,screw,edge,TEDs,basal,plane,type,ranges,respectively,semi,insulating,related,independent,etching,duration,facilitates,More,significantly,mixed,TMDs,found,consist,characteristic,both,This,enables,distinguish,from
AB值：
0.327923
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