典型文献
Highly integrated photonic crystal bandedge lasers monolithically grown on Si substrates
文献摘要：
Monolithic integration of Ⅲ-Ⅴ lasers with small footprint,good coherence,and low power consumption based on a CMOS-compatible Si substrate have been known as an efficient route towards high-density optical interconnects in the photonic integrated circuits.However,the material dissimilarities between Si and Ⅲ-Ⅴ materials limit the performance of monolithic microlasers.Here,under the pumping condition of a continuous-wave 632.8 nm He-Ne gas laser at room temperature,we achieved an InAs/GaAs quantum dot photonic crystal bandedge laser,which is directly grown on an on-axis Si(001)sub-strate,which provides a feasible route towards a low-cost and large-scale integration method for light sources on the Si platform.
文献关键词：
中图分类号：
作者姓名：
Yaoran Huang;Taojie Zhou;Mingchu Tang;Guohong Xiang;Haochuan Li;Mickael Martin;Thierry Baron;Siming Chen;Huiyun Liu;Zhaoyu Zhang
作者机构：
School of Science and Engineering and Shenzhen Key Laboratory of Semiconductor Lasers,The Chinese University of Hong Kong,Shenzhen[CUHKSZ],Shenzhen 518172,China;Department of Electronic and Electrical Engineering,University College London,London WC1E 7JE,UK;Universite Grenoble Alpes,CNRS,CEA-LETI,MINATEC,LTM,F-38054 Grenoble,France;Université Grenoble Alpes,CNRS,CEA-LETI,MINATEC,LTM,F-38054 Grenoble,France
文献出处：
引用格式：
[1]Yaoran Huang;Taojie Zhou;Mingchu Tang;Guohong Xiang;Haochuan Li;Mickael Martin;Thierry Baron;Siming Chen;Huiyun Liu;Zhaoyu Zhang-.Highly integrated photonic crystal bandedge lasers monolithically grown on Si substrates)[J].中国光学快报（英文版）,2022(04):29-32
A类：
bandedge
B类：
Highly,integrated,photonic,crystal,monolithically,grown,Si,substrates,Monolithic,integration,small,footprint,good,coherence,low,power,consumption,CMOS,compatible,have,been,known,efficient,route,towards,high,density,optical,interconnects,circuits,However,dissimilarities,between,materials,limit,performance,microlasers,Here,under,pumping,condition,continuous,wave,Ne,gas,room,temperature,achieved,InAs,GaAs,quantum,dot,which,directly,axis,provides,feasible,cost,large,scale,method,light,sources,platform
AB值：
0.601494
相似文献
机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
