典型文献
Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors
文献摘要：
Flexible thin-film transistors(TFTs)have attracted wide interest in the development of flexible and wearable displays or sensors.However,the conventional high processing temperatures hin-der the preparation of stable and reliable dielectric materials on flexible substrates.Here,we develop a stable laminated Al2O3/HfO2 insulator by atomic layer deposition at a relatively lower temperature of 150℃.A sputtered amorphous indium-gal-lium-zinc oxide(IGZO)with the stoichiometry of In0.37Ga0.20Zn0.18O0.25 is used as the active channel material.The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al2O3/HfO2 nanolaminates.Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al2O3,crystallized HfO2,and the aluminate Al-Hf-O phase,the as-prepared TFTs present the carrier mobilities of 9.7 cm2 V-1 s-1,ON/OFF ratio of～1.3×106,subthreshold voltage of 0.1 V,saturated current up to 0.83 mA,and subthreshold swing of 0.256 V dec-1,signifying a high-performance flexible TFT,which simultaneously able to withstand the bending radius of 40 mm.The TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humid-ity of 60-70％,a temperature of 25-30℃environment.The yield of IGZO-based TFTs with the nanolaminate insulator reaches 95％.
文献关键词：
中图分类号：
作者姓名：
Qiuwei Shi;Izzat Aziz;Jin-Hao Ciou;Jiangxin Wang;Dace Gao;Jiaqing Xiong;Pooi See Lee
作者机构：
School of Materials Science and Engineering,Nanyang Technological University,50 Nanyang Avenue,Singapore 639798,Singapore;School of Chemistry and Materials Science,Nanjing University of Information Science and Technology,Nanjing 210044,People's Republic of China
文献出处：
引用格式：
[1]Qiuwei Shi;Izzat Aziz;Jin-Hao Ciou;Jiangxin Wang;Dace Gao;Jiaqing Xiong;Pooi See Lee-.Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors)[J].纳微快报（英文）,2022(12):79-90
A类：
Nanolaminate,37Ga0,20Zn0,18O0
B类：
Al2O3,HfO2,Dielectric,Boosting,IGZO,Based,Flexible,Thin,Film,Transistors,thin,film,transistors,TFTs,have,attracted,wide,interest,development,flexible,wearable,displays,sensors,However,conventional,high,processing,temperatures,der,preparation,stable,reliable,dielectric,materials,substrates,Here,laminated,insulator,by,atomic,layer,deposition,relatively,lower,sputtered,amorphous,indium,gal,lium,zinc,oxide,stoichiometry,In0,used,active,channel,bottom,gate,top,contacted,configuration,further,fabricated,polyimide,nanolaminates,Benefited,from,unique,structural,compositional,consisting,crystallized,aluminate,phase,prepared,present,carrier,mobilities,ON,OFF,subthreshold,voltage,saturated,current,up,mA,swing,dec,signifying,performance,which,simultaneously,withstand,bending,radius,possess,satisfactory,humidity,stability,hysteresis,behavior,environment,yield,reaches
AB值：
0.579772
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