首站-论文投稿智能助手
典型文献
Ferroelectricity in hBN intercalated double-layer graphene
文献摘要:
Van der Waals(vdW)assembly of two-dimensional materials has long been recognized as a powerful tool for creating unique systems with prop-erties that cannot be found in natural compounds[Nature 499,419(2013)].However,among the variety of vdW heterostructures and their various properties,only a few have revealed metallic and ferroelectric behaviour signatures[Sci.Adv.5,eaax5080(2019);Nature 560,336(2018)].Here we show ferroelectric semimetal made of double-gated double-layer graphene separated by an atomically thin crystal of hexagonal boron nitride.The structure demonstrates high room temperature mobility of the order of lo m2·V-1·s-1 and exhibits ambipolar switching in response to the external electric field.The observed hysteresis is reversible and persists above room temperature.Our fabrication method expands the family of ferro-electric vdW compounds and offers a promising route for developing novel phase-changing devices.A possible microscopic model of ferroelec-tricity is discussed.
文献关键词:
作者姓名:
Yibo Wang;Siqi Jiang;Jingkuan Xiao;Xiaofan Cai;Di Zhang;Ping Wang;Guodong Ma;Yaqing Han;Jiabei Huang;Kenji Watanabe;Takashi Taniguchi;Yanfeng Guo;Lei Wang;Alexander S.Mayorov;Geliang Yu
作者机构:
National Laboratory of Solid State Microstructures and School of Physics,Nanjing University,Nanjing 210093,China;National Institute for Materials Science,1-1 Namiki,Tsukuba 305-0044,Japan;School of Physical Science and Technology,Shanghai Tech University,Shanghai 201210,China;Collaborative Innovation Centre of Advanced Microsctructures,Nanjing University,Nanjing 210093,China
文献出处:
引用格式:
[1]Yibo Wang;Siqi Jiang;Jingkuan Xiao;Xiaofan Cai;Di Zhang;Ping Wang;Guodong Ma;Yaqing Han;Jiabei Huang;Kenji Watanabe;Takashi Taniguchi;Yanfeng Guo;Lei Wang;Alexander S.Mayorov;Geliang Yu-.Ferroelectricity in hBN intercalated double-layer graphene)[J].物理学前沿,2022(04):59-65
A类:
Ferroelectricity,eaax5080,ferroelec
B类:
hBN,intercalated,double,layer,graphene,Van,Waals,vdW,assembly,two,dimensional,materials,long,been,recognized,powerful,tool,creating,unique,systems,that,cannot,found,natural,compounds,Nature,However,among,variety,heterostructures,their,various,properties,only,few,have,revealed,metallic,ferroelectric,behaviour,signatures,Sci,Adv,Here,show,semimetal,made,gated,separated,by,atomically,thin,crystal,hexagonal,boron,nitride,demonstrates,high,room,temperature,mobility,order,exhibits,ambipolar,switching,response,external,field,observed,hysteresis,reversible,persists,above,Our,fabrication,method,expands,family,offers,promising,route,developing,novel,phase,changing,devices,possible,microscopic,model,discussed
AB值:
0.665644
相似文献
A monolithically sculpted van der Waals nano-opto-electro-mechanical coupler
Tongyao Zhang;Hanwen Wang;Xiuxin Xia;Ning Yan;Xuanzhe Sha;Jinqiang Huang;Kenji Watanabe;Takashi Taniguchi;Mengjian Zhu;Lei Wang;Jiantou Gao;Xilong Liang;Chengbing Qin;Liantuan Xiao;Dongming Sun;Jing Zhang;Zheng Han;Xiaoxi Li-State Key Laboratory of Quantum Optics and Quantum Optics Devices,Institute of Opto-Electronics,Shanxi University,Taiyuan 030006,China;Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,China;Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China;School of Material Science and Engineering,University of Science and Technology of China,Anhui 230026,China;Research Center for Functional Materials,National Institute for Materials Science,1-1 Namiki,Tsukuba 305-0044,Japan;International Center for Materials Nanoarchitectonics,National Institute for Materials Science,1-1 Namiki,Tsukuba 305-0044,Japan;College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,China;The Key Laboratory of Science and Technology on Silicon Devices,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;The University of Chinese Academy of Sciences,Beijing 100029,China;State Key Laboratory of Quantum Optics and Quantum Optics Devices,Institute of Laser Spectroscopy,Shanxi University,Taiyuan 030006,China
Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity
Ruijuan Tian;Xuetao Gan;Chen Li;Xiaoqing Chen;Siqi Hu;Linpeng Gu;Dries Van Thourhout;Andres Castellanos-Gomez;Zhipei Sun;Jianlin Zhao-Key Laboratory of Light Field Manipulation and Information Acquisition,Ministry of Industry and Information Technology,and Shaanxi Key Laboratory of Optical Information Technology,School of Physical Science and Technology,Northwestern Polytechnical University,710129 Xi'an,China;Photonics Research Group and Center for Nano and Biophotonics,Ghent University,B-9000 Gent,Belgium;Materials Science Factory,Instituto de Ciencia de Materiales de Madrid(ICMM-CSIC),E-28049 Madrid,Spain;Department of Electronics and Nanoengineering and QTF Centre of Excellence,Aalto University,Fl-02150 Espoo,Finland
Recent progress in the synthesis of novel two-dimensional van der Waals materials
Renji Bian;Changcun Li;Qing Liu;Guiming Cao;Qundong Fu;Peng Meng;Jiadong Zhou;Fucai Liu;Zheng Liu-School of Optoelectronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China;Yangtze Delta Region Institute(Huzhou),University of Electronic Science and Technology of China,Huzhou 313099,China;School of Materials Science and Engineering,Nanyang Technological University,Singapore 639798,Singapore;CNRS-International-NTU-Thales Research Alliance(CINTRA),Singapore 637553,Singapore;Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement(Ministry of Education),Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems,and School of Physics,Beijing Institute of Technology,Beijing 100081,China;School of Electrical and Electronic Engineering,Nanyang Technological University,Singapore 639798,Singapore
Room-temperature third-order nonlinear Hall effect in Weyl semimetal TalrTe4
Cong Wang;Rui-Chun Xiao;Huiying Liu;Zhaowei Zhang;Shen Lai;Chao Zhu;Hongbing Cai;Naizhou Wang;Shengyao Chen;Ya Deng;Zheng Liu;Shengyuan A.Yang;Wei-Bo Gao-College of Mathematics and Physics,Beijing University of Chemical Technology,Beijing 100029,China;Division of Physics and Applied Physics,School of Physical and Mathematical Sciences,Nanyang Technological University,Singapore 637371,Singapore;Institute of Physical Science and Information Technology,Anhui University,Hefei 230601,China;Research Laboratory for Quantum Materials,Singapore University of Technology and Design,Singapore 487372,Singapore;School of Materials Science and Engineering,Nanyang Technological University,Singapore 639798,Singapore;CAS Center for Excellence in Nanoscience,National Center for Nanoscience and Technology,Beijing 100190,China;The Photonics Institute and Centre for Disruptive Photonic Technologies,Nanyang Technological University,Singapore 637371,Singapore
Effect of layer sliding on the interfacial electronic properties of intercalated silicene/indium selenide van der Waals heterostructure
Masood Yousaf;M W Younis;Ahmed S Jbara;M Junaid Iqbal Khan;G Murtaza;M A Saeed-Department of Physics,Division of Science and Technology,University of Education,Lahore,54770,Pakistan;Department of Chemistry,University of Management and Technology,C-Ⅱ,Johar Town,Lahore,54770,Pakistan;Mathematics Department,College of Education for Pure Science,Al-Muthanna University,Samawah,66001,Iraq;Laboratory of Theoretical and Experimental Physics,Department of Physics,Bahauddin Zakariya University,Multan,60800,Pakistan;Materials Modelling Lab,Department of Physics,Islamia College Peshawar,KP,Pakistan;Department of Mathematics&Natural Sciences,Prince Mohammad Bin Fahd University,P.O.Box 1664,Alkhobar 31952,Saudi Arabia
机标中图分类号,由域田数据科技根据网络公开资料自动分析生成,仅供学习研究参考。