典型文献
Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet
文献摘要：
A gated Hall-bar device is made from an epitaxially grown,free-standing InSb nanosheet on a hexagonal boron nitride(hBN)dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures.The measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite gate.The mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements and a value of the mobility exceeding～1.8×104 cm2·V-1·s-1 is found.High-field magentotransport measurements show well-defined Shubnikov-de Haas(SdH)oscillations in the longitudinal resistance of the InSb nanosheet.Temperature-dependent measurements of the SdH oscillations are carried out and key transport parameters,including the electron effective mass m*～0.028m0 and the quantum lifetime τ～0.046 ps,in the InSb nanosheet are extracted.It is for the first time that such experimental measurements have been reported for a free-standing InSb nanosheet and the results obtained indicate that InSb nanosheet/hBN/graphite gate structures can be used to develop advanced quantum devices for novel physics studies and for quantum technology applications.
文献关键词：
中图分类号：
作者姓名：
Li Zhang;Dong Pan;Yuanjie Chen;Jianhua Zhao;Hongqi Xu
作者机构：
Beijing Key Laboratory of Quantum Devices,Key Laboratory for the Physics and Chemistry of Nanodevices and School of Electronics,Peking University,Beijing 100871,China;State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Beijing Academy of Quantum Information Sciences,Beijing 100193,China
文献出处：
引用格式：
[1]Li Zhang;Dong Pan;Yuanjie Chen;Jianhua Zhao;Hongqi Xu-.Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet)[J].中国物理B（英文版）,2022(09):190-197
A类：
magneotransport,magentotransport,Shubnikov,SdH,028m0
B类：
Quantum,oscillations,hexagonal,boron,nitride,supported,single,crystalline,InSb,nanosheet,gated,Hall,bar,made,from,epitaxially,grown,free,standing,hBN,dielectric,graphite,properties,are,studied,by,transfer,characteristic,magnetotransport,measurements,low,temperatures,show,that,carriers,electrons,density,can,highly,efficiently,tuned,mobility,extracted,field,value,exceeding,found,High,well,defined,Haas,longitudinal,resistance,Temperature,dependent,carried,out,key,parameters,including,effective,mass,quantum,lifetime,ps,It,first,such,experimental,have,been,reported,results,obtained,indicate,structures,used,develop,advanced,devices,novel,physics,studies,technology,applications
AB值：
0.434728
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