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典型文献
Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation
文献摘要：
A new type of vertical nanowire (VNW)/nanosheet (VNS) FETs combining a horizontal channel (HC) with bulk/back-gate electrode configuration,including Bulk-HC and FD-SOI-HC VNWFET,is proposed and investigated by TCAD simulation.Comparisons were carried out between conventional VNWFET and the proposed devices.FD-SOI-HC VNWFET exhibits better/on/loff ratio and DIBL than Bulk-HC VNWFET.The impact of channel doping and geometric parameters on the electrical character-istic and body factor (y) of the devices was investigated.Moreover,threshold voltage modulation by bulk/back-gate bias was im-plemented and a large y is achieved for wide range Vth modulation.In addition,results of Ion enhancement and/off reduction in-dicate the proposed devices are promising candidates for performance and power optimization of NW/NS circuits by adopting dynamic threshold voltage management.The results of preliminary experimental data are discussed as well.
文献关键词：
中图分类号：
[1] 数理科学和化学（O） / 力学（O3） / 振动理论（O32） / 非线性振动（O322）
[2] 医药、卫生（R） / 临床医学（R4） / 治疗学（R45） / 生物疗法（R456）
[3] 自动化技术、计算机技术（TP） / 计算技术、计算机技术（TP3） / 计算机的应用（TP39） / 信息处理(信息加工)（TP391）
作者姓名：
Yongbo Liu;Huilong Zhu;Yongkui Zhang;Xiaolei Wang;Weixing Huang;Chen Li;Xuezheng Ai;Qi Wang
作者机构：
Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China;University of Science and Technology of China,Hefei 230026,China
文献出处：
半导体学报（英文版）
引用格式：
[1]Yongbo Liu;Huilong Zhu;Yongkui Zhang;Xiaolei Wang;Weixing Huang;Chen Li;Xuezheng Ai;Qi Wang-.Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation)[J].半导体学报（英文版）,2022(01):89-97
A类：
VNW,VNWFET,loff,DIBL
B类：
Vertical,nanowire,nanosheet,FETs,horizontal,channel,threshold,voltage,modulation,new,type,vertical,VNS,combining,HC,bulk,back,electrode,configuration,including,Bulk,FD,SOI,proposed,investigated,by,TCAD,simulation,Comparisons,were,carried,out,between,conventional,devices,exhibits,better,than,impact,doping,geometric,parameters,electrical,character,istic,body,was,Moreover,bias,plemented,large,achieved,wide,range,Vth,In,addition,results,Ion,enhancement,reduction,dicate,are,promising,candidates,performance,power,optimization,circuits,adopting,dynamic,management,preliminary,experimental,data,discussed,well
AB值：
0.538244
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