典型文献
Monolithic GaAs/Si V-groove depletion-type optical phase shifters integrated in a 300 mm Si photonics platform
文献摘要:
We demonstrate monolithically integrated n-GaAs/p-Si depletion-type optical phase shifters fabricated on a 300 mm wafer-scale Si photonics platform.We measured the phase shifter performance using Mach-Zehnder modulators with the GaAs/Si optical phase shifters in both arms.A modulation efficiency of VπL as low as 0.3 V·cm has been achieved,which is much lower compared to a carrier-depletion type Si optical phase shifter with pn junction.While propagation loss is relatively high at~6.5 dB/mm,the modulator length can be reduced by the factor of~4.2 for the same optical modulation amplitude of a Si reference Mach-Zehnder modu-lator,owing to the high modulation efficiency of the shifters.
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作者姓名:
YOUNGHYUN KIM;DIDIT YUDISTIRA;BERNARDETTE KUNERT;MARINA BARYSHNIKOVA;REYNALD ALCOTTE;CENK IBRAHIM OZDEMIR;SANGHYEON KIM;SEBASTIEN LARDENOIS;PETER VERHEYEN;JORIS VAN CAMPENHOUT;MARIANNA PANTOUVAKI
作者机构:
IMEC,Heverlee B-3001,Belgium;Department of Photonics and Nanoelectronics,BK21 FOUR ERICA-ACE Center,Hanyang University,Ansan 15588,Republic of Korea;School of Electrical Engineering,Korea Advanced Institute of Science and Technology(KAIST),Daejeon 34141,Republic of Korea
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引用格式:
[1]YOUNGHYUN KIM;DIDIT YUDISTIRA;BERNARDETTE KUNERT;MARINA BARYSHNIKOVA;REYNALD ALCOTTE;CENK IBRAHIM OZDEMIR;SANGHYEON KIM;SEBASTIEN LARDENOIS;PETER VERHEYEN;JORIS VAN CAMPENHOUT;MARIANNA PANTOUVAKI-.Monolithic GaAs/Si V-groove depletion-type optical phase shifters integrated in a 300 mm Si photonics platform)[J].光子学研究(英文),2022(06):1509-1516
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Monolithic,GaAs,Si,groove,depletion,type,optical,phase,shifters,integrated,photonics,platform,We,demonstrate,monolithically,fabricated,wafer,scale,measured,performance,using,Mach,Zehnder,modulators,both,arms,modulation,efficiency,been,achieved,which,is,much,lower,compared,carrier,pn,junction,While,propagation,loss,relatively,high,dB,length,can,reduced,by,same,amplitude,reference,owing
AB值:
0.484874
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