典型文献
Four-wave mixing in 1.3 μm epitaxial quantum dot lasers directly grown on silicon
文献摘要：
This work compares the four-wave mixing(FWM)effect in epitaxial quantum dot(QD)lasers grown on silicon with quantum well(QW)lasers.A comparison of theory and experiment results shows that the measured FWM coefficient is in good agreement with theoretical predictions.The gain in signal power is higher for p-doped QD lasers than for undoped lasers,despite the same FWM coefficient.Owing to the near-zero linewidth enhancement factor,QD lasers exhibit FWM coefficients and conversion efficiency that are more than one order of magnitude higher than those of QW lasers.Thus,this leads to self-mode locking in QD lasers.These findings are useful for developing on-chip sources for photonic integrated circuits on silicon.
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作者姓名：
JIANAN DUAN;BOZHANG DONG;WENG W.CHOW;HEMING HUANG;SHIHAO DING;SONGTAO LIU;JUSTIN C.NORMAN;JOHN E.BOWERS;FRéDéRIC GRILLOT
作者机构：
LTCI,Télécom Paris,Institut Polytechnique de Paris,91120 Palaiseau,France;State Key Laboratory on Tunable Laser Technology,School of Electronic and Information Engineering,Harbin Institute of Technology,Shenzhen 518055,China;Sandia National Laboratories,Albuquerque,New Mexico 87185,USA;Institute for Energy Efficiency,University of California Santa Barbara,Santa Barbara,California 93106,USA;Ayar Labs,Santa Clara,California 95054,USA;Quintessent,Inc.,Goleta,California 93117,USA;Center for High Technology Materials,University of New-Mexico,Albuquerque,New Mexico 87106,USA
文献出处：
引用格式：
[1]JIANAN DUAN;BOZHANG DONG;WENG W.CHOW;HEMING HUANG;SHIHAO DING;SONGTAO LIU;JUSTIN C.NORMAN;JOHN E.BOWERS;FRéDéRIC GRILLOT-.Four-wave mixing in 1.3 μm epitaxial quantum dot lasers directly grown on silicon)[J].光子学研究（英文）,2022(05):1264-1270
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0.558332
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