典型文献
Carrier and microstructure tuning for improving the thermoelectric properties of Ag8SnSe6 via introducing SnBr2
文献摘要：
The argyrodite compounds(Am+(12-n)/mBn+X2-6(Am+= Li+,Cu+,and Ag+;Bn+= Ga3+,Si4+,Ge4+,Sn4+,P5+,and As5+;and X2-= S2-,Se2-,or Te2-))have attracted great attention as excellent thermoelectric(TE)materials due to their extremely low lattice thermal conductivity(κ1).Among them,Ag8SnSe6-based TE materials have high potential for TE applications.However,the pristine Ag8SnSe6 materials have low carrier concentration(＜1017 cm-3),resulting in low power factors.In this study,a hydrothermal method was used to synthesize Ag8SnSe6 with high purity,and the introduction of SnBr2 into the pristine Ag8SnSe6 powders has been used to simultaneously increase the power factor and decrease the thermal conductivity(κ).On the one hand,a portion of the Br-ions acted as electrons to increase the carrier concentration,increasing the power factor to a value of～698 μW·m-1·K-2 at 736 K.On the other hand,some of the dislocations and nanoprecipitates(SnBr2)were generated,resulting in a decrease of κ1(～0.13 W·m-1·K-1)at 578 K.As a result,the zT value reaches～1.42 at 735 K for the sample Ag8Sn1.03Se5.94Br0.06,nearly 30％enhancement in contrast with that of the pristine sample(～1.09).The strategy of synergistic manipulation of carrier concentration and microstructure by introducing halogen compounds could be applied to the argyrodite compounds to improve the TE properties.
文献关键词：
中图分类号：
作者姓名：
Zhonghai YU;Xiuxia WANG;Chengyan LIU;Yiran CHENG;Zhongwei ZHANG;Ruifan SI;Xiaobo BAI;Xiaokai HU;Jie GAO;Ying PENG;Lei MIAO
作者机构：
Guangxi Key Laboratory of Information Materials,Electronical Information Materials and Devices Engineering Research Center of Ministry of Education,School of Materials Science and Engineering,Guilin University of Electronic Technology,Guilin 541004,China
文献出处：
引用格式：
[1]Zhonghai YU;Xiuxia WANG;Chengyan LIU;Yiran CHENG;Zhongwei ZHANG;Ruifan SI;Xiaobo BAI;Xiaokai HU;Jie GAO;Ying PENG;Lei MIAO-.Carrier and microstructure tuning for improving the thermoelectric properties of Ag8SnSe6 via introducing SnBr2)[J].先进陶瓷（英文版）,2022(07):1144-1152
A类：
Ag8SnSe6,SnBr2,Am+,mBn+X2,Bn+,Ag8Sn1,03Se5,94Br0
B类：
Carrier,microstructure,tuning,improving,thermoelectric,properties,via,introducing,argyrodite,compounds,Li+,Cu+,Ag+,Ga3+,Si4+,Ge4+,Sn4+,P5+,As5+,S2,Se2,Te2,have,attracted,great,attention,excellent,TE,materials,due,their,extremely,low,lattice,conductivity,Among,them,high,potential,applications,However,pristine,carrier,concentration,resulting,power,factors,In,this,study,hydrothermal,method,was,used,synthesize,purity,introduction,into,powders,has,been,simultaneously,increase,decrease,On,one,hand,portion,electrons,increasing,value,some,dislocations,nanoprecipitates,were,generated,zT,reaches,sample,nearly,enhancement,contrast,that,strategy,synergistic,manipulation,by,halogen,could,applied,improve
AB值：
0.482722
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机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
