典型文献
Enhanced thermoelectric performance in n-type Mg3.2Sb1.5Bi0.5 doping with lanthanides at the Mg site
文献摘要：
Mg-based thermoelectric materials have attracted more and more attention because of their rich com-position elements,green environmental protection,and lower price.In recent years,the thermoelectric properties of n-type Mg3Sb2 materials have been optimized by doping chalcogenide elements(S,Se,and Te)at the anionic position.In this work,n-type Mg3.2AxSb1.5Bi0.5(A=Gd,Ho;x=0.01,0.02,0.03,and 0.4)samples were prepared by the cation site doping of lanthanide elements(Gd and Ho).The research re-sults show that Gd and Ho doped n-type Mg3.2Sb1.5Bio.5 samples are entirely comparable to the S,Se,and Te doped n-type Mg3.2Sb1.5Bi0.5 samples,demonstrating more excellent thermoelectric properties.Dop-ing with lanthanides(Gd and Ho)at the Mg site increases the carrier concentration of the material to 8.161 x 1019 cm-3.Doping induces the contribution of more electron,thus obtaining higher conductiv-ity.The maximum zT value of the Mg3.2Gd0.02Sb1.5Bi0.5 and the Mg3.2HO0.02Sb1.5Bi0.5 samples reaches 1.61 and 1.55,respectively.This work theoretically and experimentally demonstrates Gd and Ho are efficient n-type dopants for Mg3.2Sb1.5Bi0.5 thermoelectric material.
文献关键词：
中图分类号：
作者姓名：
Lu Yu;Zipei Zhang;Juan Li;Wenhao Li;Shikai Wei;Sitong Wei;Guiwu Lu;Weiyu Song;Shuqi Zheng
作者机构：
State Key Laboratory of Heavy Oil Processing,College of New Energy and Materials,China University of Petroleum,Beijing 102249,China;College of Science,China University of Petroleum,Beijing 102249,China
文献出处：
引用格式：
[1]Lu Yu;Zipei Zhang;Juan Li;Wenhao Li;Shikai Wei;Sitong Wei;Guiwu Lu;Weiyu Song;Shuqi Zheng-.Enhanced thermoelectric performance in n-type Mg3.2Sb1.5Bi0.5 doping with lanthanides at the Mg site)[J].材料科学技术（英文版）,2022(32):108-114
A类：
2Sb1,2AxSb1,5Bio,02Sb1,2HO0
B类：
Enhanced,thermoelectric,performance,type,5Bi0,doping,lanthanides,site,materials,have,attracted,more,attention,because,their,rich,position,elements,green,environmental,protection,lower,price,In,recent,years,properties,Mg3Sb2,been,optimized,by,chalcogenide,Se,Te,anionic,this,work,Ho,samples,were,prepared,cation,research,sults,show,that,doped,entirely,comparable,demonstrating,excellent,increases,carrier,concentration,Doping,induces,contribution,electron,thus,obtaining,higher,conductiv,ity,maximum,zT,value,2Gd0,reaches,respectively,This,theoretically,experimentally,demonstrates,efficient,dopants
AB值：
0.417448
相似文献
机标中图分类号，由域田数据科技根据网络公开资料自动分析生成，仅供学习研究参考。
