典型文献
Improving the device performances of two-dimensional semiconducting transition metal dichalcogenides:Three strategies
文献摘要：
Two-dimensional(2D)semiconductors are emerging as promising candi-dates for the next-generation nanoelectronics.As a type of unique channel materials,2D semiconducting transition metal dichalcogenides(TMDCs),such as MoS2 and WS2,exhibit great potential for the state-of-the-art field-effect transistors owing to their atomically thin thicknesses,dangling-band free surfaces,and abundant band structures.Even so,the device perfor-mances of 2D semiconducting TMDCs are still failing to reach the theoret-ical values so far,which is attributed to the intrinsic defects,excessive doping,and daunting contacts between electrodes and channels.In this article,we review the up-to-date three strategies for improving the device performances of 2D semiconducting TMDCs:(i)the controllable synthesis of wafer-scale 2D semiconducting TMDCs single crystals to reduce the evolution of grain boundaries,(ii)the ingenious doping of 2D semicon-ducting TMDCs to modulate the band structures and suppress the impurity scatterings,and(iii)the optimization design of interfacial contacts between electrodes and channels to reduce the Schottky barrier heights and contact resistances.In the end,the challenges regarding the improvement of device performances of 2D semiconducting TMDCs are highlighted,and the further research directions are also proposed.We believe that this review is comprehensive and insightful for downscaling the electronic devices and extending the Moore's law.
文献关键词：
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作者姓名：
Mo Cheng;Junbo Yang;Xiaohui Li;Hui Li;Ruofan Du;Jianping Shi;Jun He
作者机构：
The Institute for Advanced Studies,Wuhan University,Wuhan 430072,China;Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education,School of Physics and Technology,Wuhan University,Wuhan 430072,China
文献出处：
引用格式：
[1]Mo Cheng;Junbo Yang;Xiaohui Li;Hui Li;Ruofan Du;Jianping Shi;Jun He-.Improving the device performances of two-dimensional semiconducting transition metal dichalcogenides:Three strategies)[J].物理学前沿,2022(06):35-50
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Improving,performances,two,dimensional,semiconducting,transition,metal,dichalcogenides,Three,strategies,Two,2D,semiconductors,are,emerging,as,promising,candi,dates,next,generation,nanoelectronics,type,unique,materials,TMDCs,such,MoS2,WS2,exhibit,great,potential,state,field,effect,transistors,owing,their,atomically,thin,thicknesses,dangling,band,free,surfaces,abundant,structures,Even,still,failing,reach,theoret,values,far,which,attributed,intrinsic,defects,excessive,doping,daunting,contacts,between,electrodes,channels,In,this,article,review,three,improving,controllable,synthesis,wafer,scale,single,crystals,reduce,evolution,grain,boundaries,ingenious,modulate,suppress,impurity,scatterings,iii,optimization,design,interfacial,Schottky,barrier,heights,resistances,challenges,regarding,improvement,highlighted,further,research,directions,also,proposed,We,believe,that,comprehensive,insightful,downscaling,devices,extending,Moore,law
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0.57557
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