The rapid development of big-data analytics(BDA),internet of things(IoT)and artificial intelligent Technology(AI)demand outstanding electronic devices and systems with faster processing speed,lower power consumption,and smarter computer architecture.Memristor,as a promising Non-Volatile Memory(NVM)device,can effectively mimic biological synapse,and has been widely studied in recent years.The appearance and development of two-dimensional materials(2D material)accelerate and boost the progress of memristor systems owing to a bunch of the particularity of 2D material compared to conventional transition metal oxides(TMOs),therefore,2D material-based memristors are called as new-generation intelligent memristors.In this review,the memristive(resistive switching)phenomena and the development of new-generation memristors are demonstrated involving graphene(GR),transition-metal dichalcogenides(TMDs)and hexagonal boron nitride(h-BN)based memristors.Moreover,the related progress of memristive mechanisms is remarked.

Zhican Zhou;Fengyou Yang;Shu Wang;Lei Wang;Xiaofeng Wang;Cong Wang;Yong Xie;Qian Liu

MOE Key Laboratory of Weak-Light Nonlinear Photonics,Department of Physics,Nankai University,Tianjin 300071,China;CAS Center for Excellence in Nanoscience,National Center for Nanoscience and Technology,University of Chinese Academy of Sciences,Beijing 100190,China;College of Mathematics and Physics,Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory,Qingdao University of Science and Technology,Qingdao 266061,China;College of Mathematics and Physics,Beijing University of Chemical Technology,Beijing 100029,China;School of Physics,Beihang University,Beijing 100191,China

物理学前沿

[1]Zhican Zhou;Fengyou Yang;Shu Wang;Lei Wang;Xiaofeng Wang;Cong Wang;Yong Xie;Qian Liu-.Emerging of two-dimensional materials in novel memristor)[J].物理学前沿,2022(02):99-112

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