典型文献
High efficiency giant magnetoresistive device based on two-dimensional MXene(Mn2NO2)
文献摘要：
Due to the unique electronic structure of half-metals,characterized by the conductivity of majority-spin and the band gap of minority-spin,these materials have emerged as suitable alternatives for the design of efficient giant magnetoresistive(GMR)devices.Based on the first-principles calcu-lations,an excellent GMR device has been designed by using two-dimen-sional(2D)half-metal Mn2NO2.The results show that Mn2NO2 has sand-wiched between the Au/nMn2NO2(n=1,2,3)/Au heterojunction and main-tains its half-metallic properties.Due to the half-metallic characteristics of Mn2NO2,the total current of the monolayer device can reach up to 1500 nA in the ferromagnetic state.At low voltage,the maximum GMR is observed to be 1.15 x 1031％.Further,by increasing the number of layers,the ultra-high GMR at low voltage is still maintained.The developed device is a spintronic device exhibiting the highest magnetoresistive ratio reported theoretically so far.Simultaneously,a significant negative differ-ential resistance(NDR)effect is also observed in the heterojunction.Owing to its excellent half-metallic properties and 2D structure,Mn2NO2 is an ideal energy-saving GMR material.
文献关键词：
中图分类号：
作者姓名：
Xiaolin Zhang;Pengwei Gong;Fangqi Liu;Kailun Yao;Jian Wu;Sicong Zhu
作者机构：
The State Key Laboratory for Refractories and Metallurgy,Hubei Province Key Laboratory of Systems Science in Metallurgical Process,Collaborative Innovation Center for Advanced Steels,International Research Institute for Steel Technology,Wuhan University of Science and Technology,Wuhan 430081,China 2 Wuhan National High Magnetic Field Center and School of Physics,Huazhong University of Science and Technology,Wuhan 430074,China 3 College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,China
文献出处：
引用格式：
[1]Xiaolin Zhang;Pengwei Gong;Fangqi Liu;Kailun Yao;Jian Wu;Sicong Zhu-.High efficiency giant magnetoresistive device based on two-dimensional MXene(Mn2NO2))[J].物理学前沿,2022(05):16-25
A类：
magnetoresistive,Mn2NO2,nMn2NO2
B类：
High,efficiency,giant,two,dimensional,MXene,Due,unique,electronic,structure,half,metals,characterized,by,conductivity,majority,band,gap,minority,these,materials,have,emerged,suitable,alternatives,efficient,GMR,devices,Based,first,principles,calcu,lations,excellent,has,been,designed,using,2D,results,show,that,sand,wiched,between,Au,heterojunction,tains,its,metallic,properties,characteristics,total,current,monolayer,reach,up,nA,ferromagnetic,state,At,low,voltage,maximum,observed,Further,increasing,number,layers,ultra,still,maintained,developed,spintronic,exhibiting,highest,ratio,reported,theoretically,far,Simultaneously,significant,negative,differ,ential,resistance,NDR,effect,also,Owing,ideal,energy,saving
AB值：
0.517847
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