High-quality narrow bandgap semiconductors nanowires(NWs)challenge the flexible near-infrared(NIR)photodetect-ors in next-generation imaging,data communication,environmental monitoring,and bioimaging applications.In this work,com-plementary metal oxide semiconductor-compatible metal of Ag is deposited on glass as the growth catalyst for the surfactant-assisted chemical vapor deposition of GaSb NWs.The uniform morphology,balance stoichiometry,high-quality crystallinity,and phase purity of as-prepared NWs are checked by scanning electron microscopy,energy dispersive X-ray spectroscopy,high-resolution transmission electron microscopy,and X-ray diffraction.The electrical properties of as-prepared NWs are stud-ied by constructing back-gated field-effect-transistors,displaying a high Ion/Ioff ratio of 104 and high peak hole mobility of 400 cm2/(V·s).Benefiting from the excellent electrical and mechanical flexibility properties,the as-fabricated NW flexible NIR pho-todetector exhibits high sensitivity and excellent photoresponse,with responsivity as high as 618 A/W and detectivity as high as 6.7×1010 Jones.Furthermore,there is no obvious decline in NIR photodetection behavior,even after parallel and perpendicu-lar folding with 1200 cycles.

School of Physics,School of Microelectronics,State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China;College of Electronic and Information Engineering,Shandong University of Science and Technology,Qingdao 266590,China

[1]Zixu Sa;Fengjing Liu;Dong Liu;Mingxu Wang;Jie Zhang;Yanxue Yin;Zhiyong Pang;Xinming Zhuang;Peng Wang;Zaixing Yang-.Ag-catalyzed GaSb nanowires for flexible near-infrared photodetectors)[J].半导体学报（英文版）,2022(11):33-38

photodetect,todetector,perpendicu

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