典型文献
Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS2 homojunction
文献摘要：
A magnetic semiconductor whose electronic charge and spin can be regulated together will be an important compon-ent of future spintronic devices.Here,we construct a two-dimensional(2D)Fe doped SnS2(Fe-SnS2)homogeneous junction and investigate its electromagnetic transport feature.The Fe-SnS2 homojunction device showed large positive and unsatur-ated magnetoresistance(MR)of 1800％in the parallel magnetic field and 600％in the vertical magnetic field,indicating an obvi-ous anisotropic MR feature.In contrast,The MR of Fe-SnS2 homojunction is much larger than the pure diamagnetic SnS2 and most 2D materials.The application of a gate voltage can regulate the MR effect of Fe-SnS2 homojunction devices.Moreover,the stability of Fe-SnS2 in air has great application potential.Our Fe-SnS2 homojunction has a significant potential in future mag-netic memory applications.
文献关键词：
中图分类号：
作者姓名：
Jingzhi Fang;Huading Song;Bo Li;Ziqi Zhou;Juehan Yang;Benchuan Lin;Zhimin Liao;Zhongming Wei
作者机构：
State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics,School of Physics,Peking University,Beijing 100871,China;Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen 518055,China;Hunan Key Laboratory of Two-Dimensional Materials,Department of Applied Physics,School of Physics and Electronics,Hunan University,Changsha 410082,China
文献出处：
引用格式：
[1]Jingzhi Fang;Huading Song;Bo Li;Ziqi Zhou;Juehan Yang;Benchuan Lin;Zhimin Liao;Zhongming Wei-.Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS2 homojunction)[J].半导体学报（英文版）,2022(09):57-62
A类：
compon,unsatur
B类：
Large,unsaturated,magnetoresistance,2D,semiconductor,SnS2,homojunction,whose,electronic,charge,be,regulated,together,will,important,future,spintronic,devices,Here,construct,two,dimensional,doped,homogeneous,investigate,its,electromagnetic,transport,feature,showed,positive,MR,parallel,field,vertical,indicating,obvi,anisotropic,In,contrast,much,larger,than,pure,diamagnetic,most,materials,voltage,effect,Moreover,stability,air,has,great,potential,Our,significant,memory,applications
AB值：
0.449034
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